Taiwan Semiconductor Manufacturing Comp. Ltd.

Imec Vzw

Interuniversitair Microelektronica Centrum (imec)

Air Products and Chemicals, Inc.

Imec

Globalfoundries Inc.

Dainippon Screen Mfg. Co., Ltd.

Katholieke Universiteit Leuven

Interuniversitair Micorelektronica Centrum (imec, Vzw)

Screen Holdings Co., Ltd.

Katholieke Universiteit Leuven, Ku Leuven R&d

Katholieke Universiteit Leuven, K.u. Leuven Research & Development

Rita Vos

Paul Mertens

Hui OuYang

Oliver Doll

Bernd Kolbesen

Jean-Luc Everaert

Albrecht Fester

Rita De Waele

Laura Nyns

Marcus Johannes Henricus Van Dal

David Paul Brunco

Chengxun Liu

Tim Stakenborg

Liesbeth Witters

Koen Martens

Tom Schram

Karolien Jans

Mark Heyns

Leonardus Leunissen

Masayuki Wada

Marcus Van Dal

Antonio L Rotondaro

Camila Dalben Madeira Campos

David Brunco

Sylvain Garaud

A cyclic capillary electrophoresis device includes a capillary channel that forms a closed loop. The capillary channel comprises an inner half facing toward a space enclosed by the loop, where the inner half having an inner wall of first charge density, and an outer half facing away from the space enclosed by the loop, where the outer half having an inner wall surface of second charge density. A difference between the first and the second charge densities exists or can be turned on. The difference is configured to create a smaller average electroosmotic flow velocity in the inner half than in the outer half.

Cyclic capillary electrophoresis device

A method for immobilizing an analyte-recognizing molecule () on a surface () functionalized with chemical groups Ysuitable for reacting with a chemical group Xof a coupling molecule () to form a reaction product comprising a chemical group Ysuitable for reacting with the analyte-recognizing molecule (), the method comprising the steps of: a) Providing the functionalized surface (), b) Contacting the functionalized surface () with a solution () comprising simultaneously: i) The coupling molecule (), and ii) The analyte-recognizing molecule ().

Surface immobilization of an analyte-recognizing molecule

The present disclosure relates to methods for forming a high-k gate dielectric, the methods comprising the steps of providing a semiconductor substrate, cleaning the substrate, performing a thermal treatment, and performing a high-k dielectric material deposition, wherein said thermal treatment step is performed in a non-oxidizing ambient, leading to the formation of a thin interfacial layer between said semiconductor substrate and said high-k dielectric material and wherein the thickness of said thin interfacial layer is less than 10 &#x212b;.

Methods of forming a semiconductor device by thermally treating a cleaned surface of a semiconductor substrate in a non-oxidizing ambient

Methods of forming a semiconductor device

A method for manufacturing a transistor device is provided, the transistor device comprising a germanium based channel layer, the method comprising providing a gate structure on the germanium comprising channel layer provided on a substrate, the gate structure being provided between a germanium based source area and a germanium based drain area at opposite sides of the germanium comprising channel layer; providing a capping layer on the germanium based source and the germanium based drain area, the capping layer comprising Si and Ge; depositing a metal layer on the capping layer; performing a temperature step, thereby transforming at least part of the capping layer into a metal germano-silicide which is not soluble in a predetermined etchant adapted for dissolving the metal; selectively removing non-consumed metal from the substrate by means of the predetermined etchant; and providing a premetal dielectric layer.

Method for manufacturing a transistor device comprising a germanium based channel layer

A substrate treating method comprising a step of preparing a semiconductor substrate (W,) which has an oxide film () containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film () being exposed, and a rinse step of supplying the oxide film () on the semiconductor substrate (W,) with a rinse liquid made of an alkaline chemical or an organic solvent. Preferably, the alkaline chemical is an alkaline aqueous solution having a pH of more than 7. Further, preferably, the organic solvent is a high concentration organic solvent having a concentration of substantially 100%.

Substrate treating method and method of manufacturing semiconductor device using the same

The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula ( 1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group with the chemical formula (1a'), wherein q is equal to 1, 2 or 3; wherein R, Rand Rare independently selected from the group consisting of hydrogen and an organic group. The second compound has the chemical formula (1c). Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate. 

Semiconductor cleaning solution

The invention relates to a method for cleaning semiconductor surfaces to achieve to removal of all kinds of contamination (particulate, metallic and organic) in one cleaning step. The method employs a cleaning solution for treating semiconductor surfaces which is stable and provokes less or no metal precipitation on the semiconductor surface.

Composition and method for treating a semiconductor substrate

The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group consisting of H and any organic side chain. The oxidizing compound can be in the form of an aqueous solution. The complexing compound is for complexing metal ions. Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate 

Composition comprising an oxidizing and complexing compound

Process for rinsing a metallized substrate subject to metal microcorrosion using an acidic aqueous rinsing solution wherein the rinsing solution comprises at least one strong inorganic acid in an amount enough to reduce the alkalinity of the rinse solution to a level low enough to reduce microcorrosion of the said metal layer while rinsing.

Metal rinsing process with controlled metal microcorrosion reduction

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Tremelo, Belgium

Rita Vos