Vti Technologies Oy

Microsoft Technology Licensing, LLC

Murata Manufacturing Co., Ltd.

Murata Electronics Oy

Risto Mutikainen

Juha Lahdenperä

Heikki T Kuisma

Jaakko Ruohio

Marco Ilmari Mattila

Tommi Riekkinen

Nikolai Chekurov

Anton Viljami Autere

Esa Tapani Räikkönen

Nikolay Chekurov

Juha LahdenperÄ

A method for balancing pulse energies across a series of write beams in an optical data writer comprises: (a) for each write beam of the series, applying an independently controllable phase delay to the write beam, thereby changing the polarization of the write beam; and (b) for each write beam with changed polarization in the series, directing a selected plane-polarized component of the write beam through a data modulator and onto an optical substrate. In this method the data modulator modulates each write beam of the series irrespective of the tolerance across the series of write beams.

Beam balancer for optical data writing

A thin film actuator having transversely oriented structural stiffeners that serve to increase actuation stroke that results from longitudinal curvature. The thin film actuator may be deployed within electromechanical devices such that an actuatable deflection of a tip of the actuator plate produces the actuation stroke. The thin film actuator may include an actuator plate affixed to a substantially rigid frame structure. The actuator plate protrudes along a longitudinal axis away from the frame structure such that the actuator plate is cantilevered from the frame structure by some distance along this longitudinal axis. The thin film actuator includes a piezoelectric film on a surface of the actuator plate. Activation of the piezoelectric film generates tensile stress or compressive stress at the surface, thereby inducing a bending moment that causes the actuator plate to undergo longitudinal curvature and some lesser degree of transverse curvature.

Thin film actuator having transversely oriented structural stiffeners to increase actuator stroke

A sensor device and a method for manufacturing the sensor device. The sensor device is equipped with an impact element that includes an inner part of dielectric bulk material and an outer part of diamond-like coating material. The inner part is made to be lower at the edges than in the middle, and the outer part is formed of a diamond-like coating layer that covers the inner part. The DLC coated impact element is mechanically more robust than the rectangular prior art structures. Furthermore, the tapered form of the impact element improves conductivity of the DLC coating such that discharge of static buildup in the impact element is effectively enabled.

Impact element for a sensor device and a manufacturing method

The present invention relates to measuring devices for use in physical measuring, and in particular to capacitive sensors. In the sensor according to the invention, the shape of the stationary electrode (), (), (), (-), (-) is stepped. Through the invention, a method for manufacturing a capacitive sensor with improved linearity is achieved, as well as a capacitive sensor suitable for use particularly in small capacitive sensor solutions.

Capacitive sensor and a method for manufacturing the capacitive sensor

A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d) of the partial area of the insulating layer is less than a thickness (d) of the support areas of the insulating area.

Method for reducing the temperature dependence of a capacitive sensor and a capacitive sensor construction

The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer () is formed by etched opening at least one spring element configuration () and at least one seismic mass () connected to said spring element configuration (). According to the invention, the openings and trenches () extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration () is based on wet etch methods.

Method for manufacturing a silicon sensor and a silicon sensor

The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode () and a stationary electrode (), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

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Espoo, Finland

Risto Mutikainen