Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Risa Yamakoshi

Masato Terasaki

Hideki Horita

Naonori Akae

Takashi Ozaki

Kosuke Takagi

Yoshiro Hirose

Satoshi Shimamoto

Ryota Sasajima

Katsuyoshi Harada

Masayoshi Minami

Shintaro Kogura

Atsushi Hirano

Toshiki Fujino

Jiro Yugami

Takanori Ueno

There is provided a technique that includes a process chamber in which a process is performed to a substrate, the process including forming a film containing a main element, a first nozzle configured to supply a precursor containing the main element to the substrate in the process chamber, and a second nozzle configured to supply a reactant to the substrate in the process chamber. The first nozzle includes a first ceiling hole provided at a ceiling portion of the first nozzle and opened in a vertical direction, and a plurality of first side holes provided at a side portion of the first nozzle and opened in a horizontal direction. An opening area of the first ceiling hole is larger than an opening area of each of the plurality of first side holes.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

There is provided a technique that includes: a process chamber in which a process of forming a film containing a main element on a substrate is performed; a first nozzle configured to supply a precursor containing the main element to the substrate in the process chart; a second nozzle separated from the first nozzle and configured to supply the precursor to the substrate in the process chamber; a third nozzle configured to supply a reactant to the substrate in the process chamber; and a plurality of first exhaust ports configured to exhaust an internal atmosphere of the process chamber, wherein each of the plurality of first exhaust ports is disposed at a position which does not face a first gas ejection hole of the first nozzle and a second gas ejection hole of the second nozzle, in a plan view.

There is provided a method of manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate; and supplying a first oxygen-containing gas to the substrate. Further, the act of supplying the precursor gas includes a time period in which the precursor gas and a second oxygen-containing gas are simultaneously supplied to the substrate.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device, includes: forming an oxynitride film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate through a first nozzle, supplying a nitriding gas to the substrate through a second nozzle, and supplying an oxidizing gas to the substrate through a third nozzle, wherein in the act of supplying the nitriding gas, an inert gas is supplied from at least one of the first nozzle and the third nozzle at a first flow rate, and in the act of supplying the oxidizing gas, an inert gas is supplied from the second nozzle at a second flow rate larger than the first flow rate.

Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.

Gas supply nozzle, substrate processing apparatus, and non-transitory computer-readable recording medium

A technique capable of suppressing the generation of foreign matter in a process container involves a method of manufacturing a semiconductor device including: (a) supplying a source gas to a substrate in a process container; (b) supplying an inert gas to an inner wall of an opening of the process container at a first flow rate while performing (a); (c) supplying a reactive gas to the substrate; and (d) supplying the inert gas to the inner wall at a second flow rate lower than the first flow rate while performing (c).

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device may include: performing a cycle a predetermined number of times to form an oxynitride film on a substrate, the cycle including: (a) supplying a source gas to the substrate via a first nozzle; and (b) supplying a nitriding gas and an oxidizing gas to the substrate via a second nozzle different from the first nozzle, wherein (a) and (b) are performed non-simultaneously, wherein (b) may include: (b-1) supplying only the oxidizing gas while suspending a supply of the nitriding gas; and (b-2) simultaneously supplying the nitriding gas and the oxidizing gas, wherein (b-1) and (b-2) are consecutively performed.

Growing community of inventors

Toyama, Japan

Risa Yamakoshi