Huawei Technologies Co., Limited

Byd Company Limited

Riqing Zhang

Xiaolong Ma

Stephane Badel

Junqing Dong

Wen Yang

Yu Xia

An embodiment of the invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove; and forming a source and a drain in a preset source drain area along the gate length direction.

Field-effect transistor and fabrication method of field-effect transistor

In embodiments of the present disclosure, an ambient medium of a two-dimensional semiconductor is doped or an ambient medium of a semiconductor is locally filled with a solid material, to form a filled region, and an electronic device based on the two-dimensional semiconductor is implemented by means of a doping effect of the doped region or the filled region on a characteristic of the two-dimensional semiconductor. In the embodiments of the present disclosure, doping the two-dimensional semiconductor is not directly processing the two-dimensional semiconductor. Therefore, damage caused to the two-dimensional semiconductor in a doping process and device performance deterioration caused accordingly can be effectively reduced, and stability of device performance after doping is improved.

Electronic device based on two-dimensional semiconductor and method for manufacturing electronic device

The invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove,; and forming a source and a drain in a preset source drain area along the gate length direction.

The invention provides a method for preparing a membrane electrode of a fuel cell, comprising the steps of preparing diffusion layers, and superimposing the diffusion layers on a proton exchange membrane having a catalyst layer on each surface, wherein the method for preparing the proton exchange membrane having a catalyst layer on each surface comprises the steps of: filling a catalyst slurry containing a catalyst and a bonding agent between two polymer films, and pressing the polymer films filled with the catalyst slurry to obtain a catalyst layer; and superimposing the catalyst layer on each surface of a proton exchange membrane. The method of the present invention can control the thickness of the catalyst layers by pressing during preparation thereof, therefore, the catalyst layers have an even thickness and surface.

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Shanghai, China

Riqing Zhang