Kabushiki Kaisha Toshiba

Rintarou Okamoto

Koji Kimura

Yuichi Nakashima

The present invention provides a method of manufacturing a semiconductor device to prevent the generation of crystalline defects due to shorting between interconnects resulting from etch residue as a result of the generation of vertical bird's beaks on top of the trench during field oxidation layer formation. The method includes forming an epitaxial layer over a semiconductor substrate, depositing a first SiO.sub.2 layer, an SiN layer and a second SiO.sub.2 layer in that order upon said epitaxial layer and forming a trench from the second SiO.sub.2 layer extending into the semiconductor substrate. A third SiO.sub.2 layer is formed coating said trench with a region of said third Si0.sub.2 layer removed adjacent to said first SiO.sub.2 layer to expose a portion of said epitaxial layer within said trench. The trench is then filled with a first polysilicon layer to coat the third SiO.sub.2 layer and the first SiO.sub.2 layer followed by removal of the second SiO.sub.2 layer and the SiN layer and finally, the first SiO.sub.2 layer is oxidized to a depth extending into the trench corresponding to the exposed portion of the epitaxial layer so as to form a field oxide layer.

Method of manufacturing a semiconductor device

In a semiconductor device manufacturing apparatus having a holder for holding a semiconductor wafer to be processed within a reaction vessel, the holder is provided with a separator for preventing ends of the semiconductor wafer from being brought into contact with the holder. Further, in a semiconductor device manufacturing apparatus having a holder functioning as a cathode, for holding a semiconductor wafer to be processed; an anode provided on the semiconductor wafer side so as to be opposed to the holder; a plurality of magnets arranged in the vicinity of the anode, for generating magnetic force lines on a surface of the anode; and a section for applying a high voltage between the anode and the cathode to generate an electric field so that plasma can be generated at intersectional portions between the generated magnetic force lines and the generated electric field, the apparatus further includes a separator provided for the holder, for preventing ends of the semiconductor wafer to be processed from being brought into contact with the holder. The separator provided for the holder is a stepped portion or a recessed portion formed on the holder.

Growing community of inventors

Kitakyushu, Japan

Rintarou Okamoto