Tokyo Electron Limited

Rintaro Takao

Naohide Ito

Hiroaki Dewa

Hiromichi Fujii

Ryota Goto

Yoshihide Kagihara

Masayuki Kozawa

A semiconductor manufacturing apparatus includes one or more process modules, a scheduler, and a transfer controller. A product wafer of a lot that is transferred from a load port to one of the one or more process modules is replenished such that a total number of wafers that are simultaneously processed in the one or more process modules becomes N. When an advance lot being processed and a post lot to be processed subsequent to the advance lot have a same processing condition, the scheduler creates the transfer plan to replenish with the product wafer of the post lot instead of a dummy wafer such that the transfer controller transfers the product wafer and the dummy wafer to the one or more process modules according to the created transfer plan.

Semiconductor manufacturing apparatus and method for transferring wafer

A substrate processing apparatus disclosed herein is capable of communicating with an external control apparatus. The substrate processing apparatus includes: a container placing portion configured to place thereon a transport container accommodating a product substrate therein; a dummy substrate accommodating unit configured to accommodate dummy substrates therein; a transport chamber provided with a transport mechanism configured to transport the product substrate and the dummy substrates; a processing chamber configured to process the product substrate and the dummy substrates transported thereto by the transport mechanism; and a controller configured to determine whether or not a number of unusable dummy substrates among the dummy substrates accommodated in the dummy substrate accommodating unit is equal to or greater than a set value, and notify the external control device of a warning when it is determined that the number of dummy substrates is equal to or greater than the set value.

Substrate processing apparatus and notification method

A method of cleaning a thin film forming apparatus wherein a process for supplying a film forming gas into a reaction tube of the thin film forming apparatus to form a thin film on an object to be processed is repeated more than one time and then a cleaning gas is supplied into the reaction tube to remove extraneous particles attached to an interior of the apparatus, the method comprising: a first cleaning process including supplying a first cleaning gas into the reaction tube to remove the extraneous particles attached to the interior of the apparatus when a first cleaning start conditions is satisfied; and a second cleaning process including performing a cleaning process that is different from the first cleaning process when a second cleaning start condition that is different from the first cleaning start condition is satisfied.

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Sapporo, Japan

Rintaro Takao