Fujitsu Corporation

Mitsui Mining & Smelting Company, Ltd.

Fujitsu Microelectronics Limited

Rintaro Suzuki

Akiyoshi Hatada

Ko Nakamura

Sadahiro Kishii

Yoshihiro Arimoto

Hiroshi Horie

Kenzo Hanawa

Masanori Terahara

Hiroshi Morioka

Naruo Ueda

The method for fabricating a semiconductor device comprises the steps of: forming on a silicon substratea hard maskof a silicon oxide film, and a silicon nitride filmhaving a width smaller than a width of the silicon oxide film; etching the silicon substratewith the hard maskas the mask to form a trenchfor defining an active regionin the silicon substrate; and forming a silicon oxide filmon the silicon substratewith the trenchformed in.

Method for fabricating semiconductor device

A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.

Slurry containing manganese oxide and a fabrication process of a

Slurry containing manganese oxide

Fabrication process of a semiconductor device using a slurry containing

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Kawasaki, Japan

Rintaro Suzuki