Fujikura Limited

Optoenegy Inc.

Rintaro Morohashi

Tomoaki Koui

Ryozaburo Nogawa

Yumi Yamada

Koji Omichi

Yoshihiro Terada

A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.

Semiconductor optical element, semiconductor optical element forming structure, and method of manufacturing semiconductor optical element using the same

Semiconductor optical element, semiconductor optical element forming structure, and method for manufacturing semiconductor optical element using the same

A method for manufacturing an optical fiber grating that includes first and second gratings that configure an optical resonator, the method including: forming the first grating by radiating ultraviolet light to an optical fiber so that a irradiation intensity Z satisfies the following Equation 1: Z&#x2266;(&#x394;&#x3bb;/x+0.04556Y+1.2225Y)/(0.05625Y+1.6125Y) . . . Equation 1, where, Z represents an irradiation intensity (mJ/mm) of the ultraviolet light, &#x394;&#x3bb;represents the maximum shift amount of a reflection center wavelength of the first grating that is allowed as long as reflection wavelengths of the first grating and second grating overlap each other, x represents a shift amount of the reflection center wavelength per temperature change of 1&#xb0; C. (nm/&#xb0; C.) in the first grating, and Y represents an intensity (W) of the wave-guided light.

Method for manufacturing optical fiber grating, optical fiber grating, and fiber laser

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Chiba, Japan

Rintaro Morohashi