Sony Corporation

Tohoku University

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Rintaro Koda

Takahiro Arakida

Yuji Masui

Tomoyuki Oki

Yoshinori Yamauchi

Masaru Kuramoto

Hideki Watanabe

Shunsuke Kono

Naoki Jogan

Tatsushi Hamaguchi

Hiroyuki Yokoyama

Takao Miyajima

Norihiko Yamaguchi

Kayoko Kikuchi

Osamu Maeda

Kentaro Fujii

Masao Ikeda

Satoshi Taniguchi

Katsunori Yanashima

Nobuhiro Suzuki

Mikihiro Yokozeki

Terukazu Naruse

Kota Tokuda

Chiyomi Uchiyama

Masayuki Tanaka

Hiroshi Nakajima

Hiroshi Yoshida

Masamichi Ito

Jugo Mitomo

Kentaro Hayashi

Nobukata Okano

Hidekazu Kawanishi

Tsuyoshi Fujimoto

Yasutaka Higa

Eiji Nakayama

Moe Takeo

Shinichi Agatuma

Kaori Naganuma

Yusuke Nakayama

Jared Alexander Kearns

Shoetsu Nagane

The present disclosure provides new and innovative VCSEL devices and systems. In an example, a VCSEL device comprises a cavity mirror with a curved mirror surface of a VCSEL and a radius of curvature (ROC) of the curved mirror surface that is anisotropic, wherein the ROC comprises four directions, the four directions being +x, +y, −x, −y, the ROC in at least one direction is in a range greater than a cavity length of the VCSEL and less than a predefined ROC value for a standard beam width (ROCUL), and the ROC in at least one of the other directions is outside the range.

VCSEL with anisotropic curved mirror

A light emitting element array includes a plurality of light emitting elementsA arranged. Each light emitting elementA includes: a stacked structureincluding a stack of a first compound semiconductor layerhaving a first surfaceand a second surface, an active layerfacing the second surfaceof the first compound semiconductor layer, and a second compound semiconductor layerhaving a first surfaceand a second surface; a first light reflection layerformed on a base part surfacelocated on a first surface side of the first compound semiconductor layer; and a second light reflection layerformed on a second surface side of the second compound semiconductor layerand having a flat shape. The base part surfaceextends to a peripheral regionsurrounded by the plurality of light emitting elements. The base part surfacehas a concavo-convex shape, and is differentiable.

Light emitting element, light emitting element array, and method of manufacturing light emitting element array

The present technology provides a surface emitting laser capable of suppressing a decrease in luminous efficiency. The present technology provides a surface emitting laser including: first and second multilayer film reflectors; a plurality of active layers laminated together between the first and second multilayer film reflectors; a tunnel junction disposed between two active layers adjacent to each other in a lamination direction among the plurality of active layers; and an oxide confinement layer disposed between one active layer of the two adjacent active layers and the tunnel junction. According to the present technology, it is possible to provide a surface emitting laser capable of suppressing a decrease in luminous efficiency.

Surface emitting laser, electronic device, and method for manufacturing surface emitting laser

There is provided a semiconductor device that comprises a layered structure configured by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor device further includes a substrate, a first light reflecting layer arranged on the first surface side of the first compound semiconductor layer, and a second light reflecting layer arranged on the second surface side of the second compound semiconductor layer. Further, the second light reflecting layer has a flat shape, a concave surface portion is formed on a substrate surface, the first light reflecting layer is formed on at least the concave surface portion, the first compound semiconductor layer is formed to extend from the substrate surface onto the concave surface portion, and a cavity is present between the first light reflecting layer and the first compound semiconductor layer.

Light emitting element and method for manufacturing same

A light emitting element includes a stacked structure including, in a stacked state, a first light reflection layerin which a plurality of thin films is stacked, a light emitting structure, and a second light reflection layerin which a plurality of thin films is stacked. The light emitting structure includes a first compound semiconductor layer, an active layerand, a second compound semiconductor layerwhich are stacked. The light emitting structureis formed with a light absorbing material layer() in parallel to a virtual plane occupied by the active layer. Let the oscillation wavelength be λ, let the equivalent refractive index from the active layer to the light absorbing material layer be n, let the optical distance from the active layer to the light absorbing material layer be L, and let Λ≡{(2m+1)λ}/(4n) (where m is an integer of equal to or more than 0), then, the value of Lis a value different from Λ, and the thickness Tof the second light reflection layeris a value different from the theoretical thickness Tof the second light reflection layer

Light emitting element

A light emitting element comprising a layered structure configured by layering a first light reflecting layerconfigured by layering a plurality of thin films, a light emitting structure, and a second light reflecting layerconfigured by layering a plurality of thin films, wherein the light emitting structureis configured by layering, from the first light reflecting layer side, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, a second electrodeand an intermediate layerare formed between the second compound semiconductor layerand the second light reflecting layerfrom the second compound semiconductor layer side, and the value of a surface roughness of a second surfaceof the intermediate layerin contact with the second light reflecting layeris less than the value of a surface roughness of a first surfaceof the intermediate layerfacing the second electrode

A surface-emitting semiconductor laser including: an active layer including a nitride semiconductor; a first semiconductor layer of a first electrical conduction type and a second semiconductor layer of a second electrical conduction type that are opposed to each other with the active layer therebetween; and a current confinement layer that is opposed to the active layer with the second semiconductor layer therebetween and has an opening, in which a side surface of the current confinement layer is inclined at at least a portion of a peripheral edge of the opening.

Surface-emitting semiconductor laser

[Object] To provide a vertical cavity surface emitting laser element and an electronic apparatus that have high light emission efficiency. [Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: an active layer; a first cladding layer; and an intermediate layer. The first cladding layer is provided on the active layer. The intermediate layer is provided on the first cladding layer, electrons in the intermediate layer having potential higher than potential of electrons in the first cladding layer, holes in the intermediate layer having potential higher than potential of holes in the first cladding layer.

Vertical cavity surface emitting laser element and electronic apparatus

A light emitting element of the present disclosure includes a compound semiconductor substrate, a stacked structureincluding a GaN-based compound semiconductor, a first light reflection layer, and a second light reflection layer. The stacked structureincludes, in a stacked state a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The first light reflection layeris disposed on the compound semiconductor substrateand has a concave mirror section. The second light reflection layeris disposed on a second surface side of the second compound semiconductor layerand has a flat shape. The compound semiconductor substrateincludes a low impurity concentration compound semiconductor substrate or a semi-insulating compound semiconductor substrate.

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Light-emitting element and method for manufacturing the same

A monolithic laser device assemblyA in the present disclosure includes a first gain portionhaving a first end portionA and a second end portionB, a second gain portionhaving a third end portionA and a fourth end portionB, one or multiple ring resonators, a semiconductor optical amplifierfor amplifying a laser light emitted from the first gain portion, and a pulse selectordisposed between the first gain portionand the semiconductor optical amplifier, in which the ring resonatoris optically coupled with the first gain portionand with the second gain portion, and laser oscillation is performed on either the first gain portionor the second gain portion

Laser device assembly

A semiconductor light emitting element has a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor light emitting element satisfies &#x394;I&#x3e;&#x394;I, where &#x394;Iis an operating current range when the temperature of the active layer is T, and &#x394;Iis the operating current range when the temperature of the active layer is T(where T&#x3e;T). The semiconductor light emitting element satisfies P&#x3e;P, where Pis a maximum optical output emitted when the temperature of the active layer is T, and Pis the maximum optical output emitted when the temperature of the active layer is T(where T&#x3e;T).

Semiconductor light emitting element and semiconductor light emitting element assembly

The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

Semiconductor device and method of manufacturing the same

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Tokyo, Japan

Rintaro Koda