Fujitsu Corporation

Rinshi Sugino

Takashi Ito

Yasuo Nara

A gettering treatment process comprises the step of irradiating an ultraviolet light onto an insulating layer (a silicon oxide thin layer formed by thermally oxidizing silicon), in a chlorine-containing gas atmosphere. The ultraviolet light excites and dissociates the chlorine-containing gas thereby to generate chlorine radicals which uniformly penetrate the insulating layer, and serve to trap metal impurities within the silicon oxide thin layer.

Gettering treatment process

The surface of a semiconductor substrate is cleaned effectively by etching the surface by placing the substrate in a halogen containing atmosphere, irradiating the atmosphere and the semiconductor surface with ultraviolet rays, and wet solution cleaning of the formed reactant from the substrate surface.

Process for cleaning surface of semiconductor substrate

In a photo-excited dry cleaning with a halogen, a highly efficient radical generation can be obtained while selecting a cleaning gas or reaction gas pressure appropriate for removing contaminants from a substrate to be cleaned. This can be attained by controlling a light transmission distance or a distance from a window of a cleaning chamber through which a light enters the cleaning chamber to the substrate.

Growing community of inventors

Atsugi, Japan

Rinshi Sugino