International Business Machines Corporation

Korea Institute of Science and Technology

Seoul National University

Rutgers, the State University of New Jersey

Sematech, Inc.

Inha University Research and Business Foundation

Rino Choi

Byoung Hun Lee

Prashant Majhi

Kisik Choi

Byung Chul Lee

Seung-Chul Song

Craig Henry Huffman

Kin Ping Cheung

Sang Ho Bae

Jong Hoan Sim

Zhibo Zhang

Whal Lee

Dawei Heh

Provided is a capacitive micromachined ultrasonic transducer (CMUT) including a substrate, a top electrode provided on the substrate to be spaced apart from the substrate, a supporter made of an insulating material and coupled between the substrate and an edge of the top electrode to support and fix the edge of the top electrode and to define a gap between the substrate and the edge of the top electrode, and a plurality of nanoposts having both ends coupled and fixed to the substrate and the top electrode in the gap, and being compressible and stretchable in a longitudinal direction to at least vertically move the top electrode when power is applied to the top electrode.

Capacitive micromachined ultrasonic transducer

Methods of forming dual metal gates and the gates so formed are disclosed. A method may include forming a first metal (e.g., NMOS metal) layer on a gate dielectric layer and a second metal (e.g., PMOS metal) layer on the first metal layer, whereby the second metal layer alters a work function of the first metal layer (to form PMOS metal). The method may remove a portion of the second metal layer to expose the first metal layer in a first region; form a silicon layer on the exposed first metal layer in the first region and on the second metal layer in a second region; and form the dual metal gates in the first and second regions. Since the gate dielectric layer is continuously covered with the first metal, it is not exposed to the damage from the metal etch process.

Dual metal gates using one metal to alter work function of another metal

Methods for determining capacitance values of a metal on semiconductor (MOS) structure are provided. A time domain reflectometry circuit may be loaded with a MOS structure. The MOS structure may be biased with various voltages, and reflectometry waveforms from the applied voltage may be collected. The capacitance of the MOS structure may be determined from the reflectometry waveforms.

Methods for measuring capacitance

Growing community of inventors

Seoul, South Korea

Rino Choi