Forschungsverbund Berlin E.v.

Rimma Zhytnytska

Hans-Joachim Würfl

Joachim Wuerfl

Oliver Hilt

Victor Sidorov

This invention relates to a semiconductor layer structure. The semiconductor layer structure described includes a substrate and a buffer layer deposited onto the substrate. The semiconductor layer structure is characterized in that a drain voltage threshold lower than the breakdown voltage threshold is determined by isolating ions that are selectively implanted in just one region of the substrate into the substrate, wherein charge can dissipate from the one contact through the buffer layer towards a substrate region without isolating ions, if the one potential deviates from the other at least by the drain voltage threshold, and wherein the substrate region without isolating ions is located underneath the one contact. The semiconductor layer structure described allows dissipation of currents induced by induction in blocking active structures without damaging the active structures.

Semiconductor layer structure

The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump. The method for producing a metallization () for at least one contact pad () according to the invention comprises the following process steps: applying at least one contact pad () to a substrate (), applying a barrier layer () to the top side of the at least one contact pad () and applying a metallization () to the top side of the barrier layer (), characterized in that the barrier layer () and the metallization () are applied by means of physical separation and that the metallization () is designed as a layer structure having two multiple alternating metallization layers (), wherein the first metallization layer () is made of nickel or an Ni alloy having a layer thickness of less than 500 nm and the second metallization layer () is made of a material that is different than nickel and is electrically conductive.

Method for producing a metallization having two multiple alternating metallization layers for at least one contact pad and semiconductor wafer having said metallization for at least one contact pad

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Berlin, Germany

Rimma Zhytnytska