Asml Netherlands B.v.

Rilpho Ludovicus Donker

Han-Kwang Nienhuys

Gosse Charles De Vries

Erik Roelof Loopstra

Vadim Yevgenyevich Banine

Pieter Willem Herman De Jager

Andrey Alexandrovich Nikipelov

Olav Waldemar Vladimir Frijns

Borgert Kruizinga

Wouter Joep Engelen

Leonardus Adrianus Gerardus Grimminck

Martinus Hendrikus Antonius Leenders

Franciscus Johannes Joseph Janssen

Ramon Pascal Van Gorkom

Daniel Jason Riggs

Michael Jozef Mathijs Renkens

Johannes Antonius Gerardus Akkermans

Otger Jan Luiten

Andelko Katalenic

Petrus Rutgerus Bartraij

Lucas Johannes Peter Ament

Vladimir Litvinenko

Liane Manuela Matthes

Petrus Bartraij

Leonardus Grimminck

Lucas Ament

Franciscus Janssen

Olav Frijns

Michael Renkens

Pieter De Jager

Johannes Akkermans

A metrology system includes a light beam metrology apparatus configured to sense one or more aspects of an amplified light beam and to make adjustments to the amplified light beam based on the sensed one or more aspects; a target metrology apparatus configured to measure one or more properties of a modified target after a target has interacted with the amplified light beam, and to determine a moment when the modified target achieves a reference calibration state; and a control apparatus configured to: receive the reference calibration state and the moment at which the reference calibration state is achieved from the target metrology apparatus; determine a light beam calibration state of the amplified light beam based on the received reference calibration state and the moment at which the reference calibration state is achieved; and provide the light beam calibration state to the light beam metrology apparatus.

Calibration system for an extreme ultraviolet light source

A radiation system includes a beam splitting apparatus configured to split a main radiation beam into a plurality of branch radiation beams and a radiation alteration device arranged to receive an input radiation beam and output a modified radiation beam, wherein the radiation alteration device is configured to provide an output modified radiation beam which has an increased etendue, when compared to the received input radiation beam, wherein the radiation alteration device is arranged such that the input radiation beam which is received by the radiation alteration device is a main radiation beam and the radiation alteration device is configured to provide a modified main radiation beam to the beam splitting apparatus, or wherein the radiation alteration device is arranged such that the input radiation beam which is received by the radiation alteration device is a branch radiation beam output from the beam splitting apparatus.

Radiation system

A radiation source comprises: an emitter for emitting a fuel target towards a plasma formation region; a laser system for hitting the target with a laser beam to generating a plasma; a collector for collecting radiation emitted by the plasma; an imaging system configured to capture an image of the target; one or more markers at the collector and within a field of view of the imaging system; and a controller. The controller receives data representative of the image; and controls operation of the radiation source in dependence on the data.

Radiation source

A delivery system for use within a lithographic system. The beam delivery system comprises optical elements arranged to receive a radiation beam from a radiation source and to reflect portions of radiation along one or more directions to form a one or more branch radiation beams for provision to one or more tools.

Beam delivery apparatus and method

A radiation alteration device includes a continuously undulating reflective surface, wherein the shape of the continuously undulating reflective surface follows a substantially periodic pattern.

A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.

Lithographic method

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Eindhoven, Netherlands

Rilpho Ludovicus Donker