Umk Technologies Co., Ltd.

Rikizou Hatakeyama

Yoshimi Kamijo

Takehiro Takoshima

Akihiro Okazaki

Nobuyuki Mori

Akira Mitsuzuka

Takashi Ushida

Hideaki Ido

Ko Nakajima

A high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating meansand a writing word lineare disposed relative to a perpendicular magnetic recording film, and a reading/writing bit-line conductor, a magnetoresistive-effect elementand a reading word lead conductorare laminated in order on a probe substrate opposed to the perpendicular magnetic recording film. A magnetic probecomposed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect elementin a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.

Large-capacity magnetic memory using carbon nano-tube

Growing community of inventors

Furukawa, Japan

Rikizou Hatakeyama