Sharp Kabushiki Kaisha Corporation

Rikiya Takita

Makoto Nakazawa

Fumiki Nakano

Hiroyuki Moriwaki

Wataru Nakamura

Akinori Kubota

Kazuhide Tomiyasu

Tetsuya Tanishima

A photoelectric conversion panel includes a thin-film transistor provided in a first region, a photoelectric conversion element provided in the first region, a first organic film having a first groove portion provided in a second region, a second organic film having a second groove portion provided in the second region and in a position different from that of the first groove portion, a first inorganic film formed so as to cover the first organic film and cover an inner surface of the first groove portion, and a second inorganic film formed so as to cover the second organic film and cover an inner surface of the second groove portion.

Photoelectric conversion panel

An X-ray imaging panel includes: a photodiode that converts scintillation light that is obtained from an X-ray that passes through an object into a signal; a first thin-film transistor; a first insulating film that covers at least a part of the first thin-film transistor and that has a first opening above the first thin-film transistor; a lower electrode that is disposed below the photodiode, that covers at least a part of the first insulating film, that is formed in the first opening of the first insulating film, and that is connected to the first thin-film transistor in the first opening; and a second insulating film that is disposed above the lower electrode and that is formed in the first opening. The photodiode covers the first opening in which the second insulating film is formed, and the photodiode is connected to the lower electrode.

X-ray imaging panel and method of manufacturing X-ray imaging panel

A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

Photoelectric conversion device and X-ray imaging device

A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; a first inorganic layer formed so as to cover at least a part of the photoelectric conversion element, and to cover the first organic film; and a second organic film formed in an upper layer with respect to the first organic film, wherein the first inorganic layer is provided with a first through hole connecting the first organic film and the second organic film.

Photoelectric conversion panel and method for manufacturing photoelectric conversion panel

An active matrix substrate includes a pixel region including a plurality of pixels over a substrate and a frame region outside the pixel region. In the plurality of pixels, a plurality of photoelectric conversion elements are provided. In the frame region, an antistatic hole is provided. The pixel region and a portion of the frame region are covered with an insulating film, and the antistatic hole is bored through the insulating film. An antistatic wire is provided in the frame region so as to surround the pixel region, and has a surface exposed in the antistatic hole.

Active matrix substrate and method for inspecting the same

An imaging panel includes an imaging element that is formed on a substrate. The imaging element includes a gate line, a source line, a switching element, a photoelectric conversion element, and a bias line. The gate line and the source line are formed in a layer in which a part of the switching element is formed, a layer in which a part of the photoelectric conversion element is formed, or a layer in which the bias line is formed.

Imaging panel

An active matrix substrate includes a photoelectric conversion element, a first inorganic insulating film, a first planarizing film, and a second inorganic insulating filmand/oron a substrate. The first inorganic insulating film, the first planarizing film, and the second inorganic insulating filmand/orare provided up to an end Pof the substrate. The first inorganic insulating filmcovers a surface of the photoelectric conversion element, the first planarizing filmhas a tapered portion, and an angle &#x3b8; between the tapered portion and the first inorganic insulating filmis an acute angle. The second inorganic insulating filmand/orcovers the first planarizing film

Active matrix substrate and imaging panel with same

An imaging panel includes an active matrix substrate that has a plurality of pixels each provided with a photoelectric conversion element, and the pixels each include a first electrode provided at a first surface of the photoelectric conversion element, a first flattening film provided above the photoelectric conversion element and the first electrode, and a bias conductive part provided below the first flattening film. The bias conductive part is connected to the first electrode and applies bias voltage to the first electrode. The first flattening film has no opening in a region overlapped with a pixel region.

An active matrix substrate includes a photoelectric conversion element, a first planarizing film, a first inorganic insulating film, and a bias wire. The first planarizing filmcovers the photoelectric conversion elementand has a first openingat a position at which the first openingoverlaps with the photoelectric conversion elementin plan view. The first inorganic insulating filmhas a second opening on an inner side of the first opening h and covers a surface of the first planarizing film. The bias wireis provided on a first inorganic insulating filmand is connected to the photoelectric conversion elementvia the second opening CH

An active matrix substrate includes a photoelectric conversion element in a pixel P defined by a gate line and a data line. The photoelectric conversion element is connected with a bias line, and the bias line is connected with a bias terminal that supplies a bias voltage to the bias line. The bias terminal is connected with a first protection circuit that is formed with a nonlinear element. The first protection circuit is connected in a reverse-biased state between a first line to which a predetermined voltage higher than the bias voltage is supplied, and the bias terminal.

Active matrix substrate, and x-ray imaging panel

An imaging device according to an embodiment of the present invention includes a photoelectric conversion part that converts incident light into electric charge, and a detection part that detects the electric charge generated in the photoelectric conversion part. The photoelectric conversion part includes a plurality of photodiodes arranged in a matrix, and the detection part includes a plurality of thin film transistors provided corresponding to the plurality of photodiodes and arranged in a matrix. Each of the photodiodes includes a lower electrode, a semiconductor layer, and an upper electrode, and an insulating layer is provided between at least a portion of the lower electrode in the thickness direction and the semiconductor layer in the peripheral portion of the semiconductor layer. An end of the insulating layer has a tapered shape having an acute angle between the lower surface and the side surface of the insulating layer.

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Sakai, Japan

Rikiya Takita