Sony Corporation

Rikio Ikeda

Ritsuko Inoue

Yasushi Kusano

Harunobu Hirano

A method, system or device for forming a resist pattern applied to fine processing, such as that for preparation of a semiconductor device. The wafer transportation system for the process affected by processing conditions of the process, such as the temperature or time, is provided independently of the wafer transportation system for other processes in order to prevent heat transmission through a transport arm to assure a more accurate resist forming operation and to control the wafer transportation time between the processes more accurately and promptly. Pattern formation may be achieved more accurately through the use of a chemical amplification resist material subject to influences from the wafer environment.

Method of manufacturing semiconductors having improved temperature

A phase-shifting mask having a light shielding portion, a light permeation portion and a phase-shifting portion on a transparent substrate is manufactured by forming a negative resist layer to the entire surface on a transparent substrate formed with a light shielding material pattern, applying exposure from the rearface of the transparent substrate, followed by applying development to leave the negative resist layer on the light permeation portion, then further continuing development for the negative resist layer to reduce the width and form a sub-space between the negative resist layer and the light shielding portion, to obtain a phase-shifting portion easily and at a high accuracy. The phase-shifting portion can be formed by an easy and simple step under a good controllability free from of the problems of mask alignment between each other.

Method of manufacturing a self-aligned phase-shifting mask

A developing apparatus used for developing a resist applied on a substrate, comprises: developer storage means for storing a developer; a developer supply tube for supplying the developer from the developer storage means through one end thereof onto a substrate supported in a position; and degas means located immediately upstream of the one end of the developer supply tube to deaerate the developer. A resist developing method comprises the steps of: supplying a substance; applying a resist onto the substrate; making a latest image in the resist; and supplying a developer onto the resist having the latest image to develop the resist, wherein the step of supplying the developer provides the developer in several times. Another resist developing method comprises the steps of: supplying a substrate; applying a resist onto the substrate; forming a latest image in the resist; providing a developer onto the resist having the latest image therein; after providing the developer, rotating the substrate and then stopping same; maintaining the substrate still; and rotating the substrate and then stopping same.

Resist developing apparatus and resist developing method

A flat display apparatus has a substrate, a plurality of pointed cathodes formed on the substrate, a planar anode facing toward the cathodes via a vacuum space, and a light emitting layer on the side of the anode which is opposite from the cathodes. The anode has a plurality of projections in positions corresponding to the cathodes. The anode projections reduce electron scatter to improve light emission from the light emitting layer. In another embodiment of the flat display apparatus, a primary electron source and a plurality of secondary electron sources connected to bias voltages are disposed on the substrate and positioned relative to one another in an alternately staggered vertical positional sequence toward a light emitting member so that electrons are successively amplified. In a further embodiment of the flat display apparatus, wherein a plurality of electron sources are disposed on the substrate, an electrode faces toward the electron sources, and a light emitting member is provided on a side of the electrode opposite and facing away from the substrate, the electron sources include a primary electron source for generating primary electrons and a secondary electron source for amplifying primary electrons from the primary electron source due to a Malta effect.

Field emission type flat display apparatus

A method and apparatus for rotating a substrate having a liquid material placed thereon to coat the liquid material over the substrate. A plate member is positioned at a predetermined height above the substrate to minimize the growth of the fluid flows produced above the substrate due to rotation of the substrate.

Spin coating apparatus for film formation over substrate

A flat display apparatus has a substrate, a plurality of pointed cathodes formed on the substrate, a planar anode facing toward the cathodes via a vacuum space, and a light emitting layer on the side of the anode which is opposite from the cathodes. The anode has a plurality of projections in positions corresponding to the cathodes. The anode projections reduce electron scatter to improve light emission from the light emitting layer. In another embodiment of the flat display apparatus, a plurality of electron sources are disposed on the substrate and positioned relative to one another in an alternately staggered vertical positional sequence toward a light emitting member so that electrons are successively amplified. In a further embodiment of the flat display apparatus, wherein a plurality of electron sources are disposed on the substrate, an electrode faces toward the electron sources, and a light emitting member is provided on a side of the electrode opposite and facing away from the substrate, the electron sources include a primary electron source for generating primary electrons and a secondary electron source for amplifying primary electrons from the primary electron source due to a malta effect.

Disclosed is herein a method of developing an exposed resist film formed over a major surface of a substrate, the method comprising: holding the substrate carrying the resist film in contact with the supporting surface of a supporting member, having an area smaller than the surface area of the substrate, and supplying a developer onto the resist film so that the developer is retained in a developer puddle by surface tension on the surface of the resist film to develop the resist film, wherein the substrate carrying the resist film is separated from the supporting member during the progress of the development of the resist film.

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Kanagawa, Japan

Rikio Ikeda