Nissan Chemical Industries Limited

Nissan Chemical Corporation

Hoya Corporation

Rikimaru Sakamoto

Takafumi Endo

Keisuke Hashimoto

Yasunobu Someya

Hirokazu Nishimaki

Tokio Nishita

Noriaki Fujitani

Yasushi Sakaida

Hiroyuki Wakayama

Hikaru Tokunaga

Takahiro Kishioka

Wataru Shibayama

Shuhei Shigaki

Ryuji Ohnishi

Tetsuya Shinjo

Ryuta Mizuochi

Bangching Ho

Makoto Nakajima

Ryo Karasawa

Kenji Takase

Tomoyuki Enomoto

Satoshi Takeda

Daigo Saito

Masaki Nagai

Masahiro Hashimoto

Yoshiomi Hiroi

Hiroaki Yaguchi

Takahiro Sakaguchi

Ken-ichi Mizusawa

Keisuke Nakayama

Yasuo Kawamura

Yuichi Goto

Yuto Hashimoto

Takahiro Hiromatsu

Daisuke Maruyama

Tadashi Hatanaka

Naoki Nakaie

Gun Son

Tomohisa Yamada

Tomohisa Ishida

Kazuya Ebara

Yuki Takayama

Hikaru Imamura

Masashi Ohno

Bang-ching Ho

Satoshi Hamada

A resist underlayer film formation composition including a novolak resin that has a repeating unit structure represented by the following formula (1). (In formula (1), groups A and B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and have a structure in which two or more mono- or divalent chemical groups selected from the group consisting of chemical groups (a) that cause an increase in mass upon oxidation, groups (b) that form a crosslink upon heating, and groups (c) that induce phase separation during curing have replaced hydrogen atoms on the ring(s) contained in group A and/or B.) The composition further includes a crosslinking agent and an acid and/or acid generator. A production process is provided in which the resist underlayer film formation composition is applied to a semiconductor substrate and burned to obtain a resist underlayer film.

Composition for forming resist underlayer film with improved film density

A resist underlayer film-forming composition includes a resin; and a crosslinkable compound of Formula (1) or Formula (2): wherein the crosslinkable compound of Formula (1) or Formula (2) is a compound obtained by reacting a compound of Formula (3) or Formula (4): with an ether compound comprising a hydroxy group or a Calcohol.

Resist underlayer film-forming composition containing substituted crosslinkable compound

A resist underlayer film-forming composition in which a coating film having high flattening properties is formed on a substrate. A resist underlayer film-forming composition including an epoxy adduct (C) obtained by reacting an epoxy group-containing compound (A) with an epoxy adduct-forming compound (B), wherein one or both of the epoxy group-containing compound (A) and the epoxy adduct-forming compound (B) contain an optionally branched alkyl group having a carbon atom number of three or more. The epoxy adduct-forming compound (B) is at least one compound selected from the group consisting of carboxylic acid (B1), carboxylic anhydride (B2), a phenol compound (B3), a hydroxyl group-containing compound (B4), a thiol compound (B5), an amino compound (B6), and an imide compound (B7). The optionally branched alkyl group having a carbon atom number of three or more is contained in the epoxy adduct-forming compound (B). The optionally branched alkyl group has a Calkyl group.

Resist underlayer film-forming composition comprising epoxy adduct having long-chain alkyl group

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and Band Bare each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or Band Boptionally form a ring with a carbon atom bonded to Band B.

Resist underlayer film-forming composition containing indolocarbazole novolak resin

A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure, a hydrocarbon structure, and a solvent. The compound may have the photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure and the hydrocarbon structure in one molecule, or may be a combination of compounds which contain the structures in separate molecules.

Photocurable composition and method for producing semiconductor device

Provided are: a composition for forming a coating film, the composition comprising (a) a polymer containing a structural unit represented by formula (1a) or (1b), and (b) a solvent including 51-99 mass % of water and 1-49 mass % of at least one organic solvent selected from the group consisting of propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, methyl 2-hydroxyisobutyrate, ethyl 3-ethoxypropionate, and ethyl lactate; and a method for manufacturing a semiconductor device using the same.

Composition for forming coating film and method for manufacturing semiconductor device

A resist underlayer film-forming composition has high solubility in a solvent used at a lithography process for exhibiting good coating film forming properties and able to decrease a sublime generated during formation of a film. A resist underlayer film-forming composition having a novolac resin having a structure group (C) obtained by a reaction of an aromatic ring structure of an aromatic ring-containing compound (A) with a vinyl group of an aromatic vinyl compound (B). The aromatic vinyl compound (B) is represented by Formula (1), and is specifically styrene, 2-vinylnaphthalene, 4-tert-butylstyrene, or 4-tert-butoxystyrene. The structure group (C) is represented by Formula (2). The aromatic ring-containing compound (A) is an aromatic amine compound or a phenolic hydroxy group-containing compound. The novolac resin is a resin produced by a reaction of the aromatic amine compound or the phenolic hydroxy group-containing compound with aldehyde or ketone.

Resist underlayer film-forming composition containing novolac resin to which aromatic vinyl compound is added

A resist underlayer film-forming composition having a dramatically improved crosslinking ability over conventional compositions, and further, a resist underlayer film-forming composition that crosslinks with a component of a resist material, in order to improve the adhesion of a resist underlayer film to a resist pattern. A resist underlayer film-forming composition for lithography including a copolymer having a structural unit of formula (1) and a structural unit of formula (2): (wherein each Ris independently a hydrogen atom or a methyl group; each Ris independently a Calkylene group; Ris a single bond or a methylene group; A is a linear, branched, or cyclic aliphatic group having a carbon atom number of 1 to 12 and optionally having a substituent, or a Caromatic or heterocyclic group optionally having a substituent; and Pr is a protecting group); a crosslinking agent; an organic acid catalyst; and a solvent.

Resist underlayer film-forming composition comprising polymer having structural unit having urea linkage

A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R, R, and Rin Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R, R, and Rmay be the same or different and may bond to each other to form a ring structure.

Resist underlayer film-forming composition containing amide solvent

A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40. The nitrogen-containing structure contains a reactive nitrogen-containing functional group or reactive carbon-containing functional group produced by irradiation with ultraviolet light; and the sulfur-containing structure contains an organic sulfur radical or carbon radical produced by irradiation with ultraviolet light.

There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.

Composition for forming resist overlayer film for EUV lithography

A composition for forming an underlayer film necessary for facilitating alignment of self-assembled film into desired vertical pattern. Composition for forming an underlayer film of self-assembled film including a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound in main chain. The polymer is a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound with aromatic ring structure of aromatic ring-containing compound or polymer chain derived from vinyl group of vinyl group-containing compound in main chain. The polymer has unit structure of Formula (1):X&#x2014;Y&#x2003;&#x2003;Formula (1)wherein X is single bond, divalent group having vinyl structure as polymer chain, or divalent group having aromatic ring-containing structure as polymer chain, and Y is divalent group having aliphatic polycyclic structure as polymer chain. The aliphatic polycyclic compound is bi- to hexa-cyclic diene compound. The aliphatic polycyclic compound is dicyclopentadiene or norbornadiene.

Composition for forming underlayer film of self-assembled film including aliphatic polycyclic structure

A resist underlayer film-forming composition for lithography including a copolymer having a structural unit of the following Formula (1) to Formula (3), a crosslinking agent, an organic acid catalyst, and a solvent: (wherein Rs are independently a hydrogen atom or a methyl group, Ris a Calkylene group, A is a protective group, Ris an organic group having a 4-membered ring to 7-membered ring lactone framework, adamantane framework, tricyclodecane framework or norbornane framework, Ris a linear, branched or cyclic organic group having a carbon atom number of 1 to 12 in which at least one hydrogen atom is substituted with a fluoro group and which optionally has at least one hydroxy group as a substituent).

Resist underlayer film-forming composition

A resist underlayer film for lithography has high solubility in a resist solvent (solvent used in lithography) for expressing good coating film forming property and a smaller selection ratio of dry etching rate as compared with a resist. A resist underlayer film-forming composition containing a novolac resin containing a structure (C) obtained by a reaction of an aromatic ring of an aromatic compound (A) with a hydroxy group-containing aromatic methylol compound (B). The aromatic compound (A) may be a component constituting the structure (C) in the novolac resin. The hydroxy group-containing aromatic methylol compound (B) may be a compound of Formula (1):  The hydroxy group-containing aromatic methylol compound (B) may be 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol, or 2,6-di-tert-butyl-4-hydroxymethyl phenol.

Resist underlayer film-forming composition containing novolac resin reacted with aromatic methylol compound

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Toyama, Japan

Rikimaru Sakamoto