Kabushiki Kaisha Toshiba

Rikako Kani

Yoshihiko Nakano

Shuji Hayase

Yasunobu Onishi

Yasuhiko Sato

Satoshi Mikoshiba

Shuzi Hayase

Masaki Narita

Seiro Miyoshi

Hideto Matsuyama

Sawako Yoshikawa

Toshiro Hiraoka

Toru Ushirogouchi

Atsushi Ando

Shinji Murai

Eishi Shiobara

Takeshi Okino

Akira Yoshizumi

Yukihiro Mikogami

Sawako Fujioka

Mao Ito

A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0&deg; C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.

Method of forming pattern

A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.

Method of forming a pattern using polysilane

There is proposed a method of forming an insulating film pattern, which enables an insulating pattern of high precision and low dielectric constant to be easily obtained by means of an alkali development with basic solution. This method comprises the steps of coating a photosensitive composition comprising a first silicone polymer having a specific monomer and a second silicone polymer having a specific monomer on a substrate thereby to form a film of photosensitive composition, selectively exposing the film of photosensitive composition, alkali-developing the exposed film to form a pattern, and heat-treating the pattern of the photosensitive composition film.

Method of forming an insulating film pattern and photosensitive

Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.

Pattern forming method utilizing first insulative and then conductive

The present invention relates to a photosensitive composition comprising a polysilane having a repeating unit represented by the following general formula (1) and a benzophenone type compound having an organic peroxide, ##STR1## wherein Ar represents a substituted or unsubstituted aryl group.

Photosensitive composition comprising aryl-substituted polysilane and

A method of forming a pattern comprising the steps of forming a film of an organosilane compound comprising a polysilane having a repeating unit represented by the following general formula (1) on a substrate, irradiating an actinic radiation onto a predetermined portion of the film of the organosilane compound formed on the substrate, and removing the predetermined portion of the film irradiated by the actinic radiation by dissolving it with an aqueous alkaline developing solution. ##STR1## wherein Ar is a substituted or non-substituted aryl group.

Silicone polymer composition, method of forming a pattern and method of

A method of manufacturing a colored material wherein ultraviolet rays are irradiated onto an organic silicon compound film having any one of repeating units represented by the following general formulas (1) to (3), and then the film is heat-dried to turn the film into a three-dimensional structure. This process is repeated for each of R, G and B. As a result, a color filter provided with a color layer comprising a three-dimensional structure composed of silicon atom having one Si--C bond and formed through Si--O--Si bonds, and having a plurality of regions containing three different colors of R, G and B are contained therein can be manufactured. ##STR1## wherein R.sup.1 is a substituted or non-substituted hydrocarbon group, R.sup.2 is a substituted or non-substituted hydrocarbon group or acyl group, and R.sup.3 is a substituted or non-substituted silyl group or polysilane skeleton.

Organic polysilane composition, colored material, method of

Disclosed are a polysilane monomolecular film and a polysilane built-up film formed by building up a plurality of said monomolecular films, said monomolecular film consisting of a polysilane having a repeating unit represented by general formula (1) given below: ##STR1## where, R.sup.1 represents a substituted or unsubstituted alkyl group having 1 to 24 carbon atoms or a substituted or unsubstituted aryl group having 6 to 24 carbon atoms, R.sup.2 represents a divalent hydrocarbon group having 1 to 4 carbon atoms which can be substituted, and X represents hydroxyl group, amino group, carboxyl group, or a hydrophilic group having at least one selected from the group consisting of hydroxyl group, amino group, carboxyl group, amide linkage, ester linkage, carbamate linkage and carbonate linkage. The polysilane monomolecular film and built-up film can be formed on a substrate by an LB technique. In the films, the molecules of the polysilane having the repeating unit (1), that is, the Si-Si backbones are oriented in a fixed direction.

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Yokohama, Japan

Rikako Kani