Nxp B.v.

Koninklijke Philips Corporation N.v.

Rik Jos

Mark Pieter Van Der Heijden

Jan Sophia Vromans

Dev Alok

Antonius Johannes Matheus De Graaw

Method for setup of parameter values in a RF power amplifier circuit arrangement (), wherein the amplifier circuit arrangement () comprises a first () and a second () amplification branch and is operated in an out-phasing configuration for amplification of RF input signals with modulated amplitude and modulated phase and respective circuit arrangements are disclosed. According to a first aspect a re-optimization of the dead-time or conversely the duty-cycle, respectively, the phase of the output signal after the combiner can be kept linear with respect to the out-phasing angle. Further, according to a second aspect, additionally to introduction of an optimally chosen dead-time, a non-coherent combiner (Lx, Lx*) can reduce crowbar current and switching losses due the output capacitance (Cds). Furthermore, according to a third aspect the reactive compensation can, additionally or alternatively, be controlled by operating both amplification branches at different duty-cycles.

Efficient linear LINC power amplifier

A switching amplifier () comprising: a switch () configured to electrically connect and disconnect a first pin () of the switch () to a second pin () of the switch () in accordance with a pulse width modulated input signal (). The second pin () is connected to a ground connector (). The switching amplifier also comprises a feed inductor () connected between a voltage supply connector () and the first pin () of the switch (), and a circuit () comprising a variable component having a variable imaginary impedance. The circuit () is connected between the first pin () of the switch () and an output connector of the amplifier (. The switching amplifier further comprising a controller () configured to generate a control signal () for the circuit () such that the variable component of the circuit is adjustable in accordance with the duty cycle of the pulse width modulated input signal ().

Switching amplifier

A silicon carbide lateral metal-oxide-semiconductor field-effect transistor (SiC LMOSFET) having a self-aligned drift region and method for forming the same is provided. Specifically, the SiC LMOSFET includes a source region, a drift region and a drain region. The source and drain regions are implanted using non self-aligned technology (i.e., prior to formation of the gate electrode and the gate oxide layer), while the drift region is implanted using self-aligned technology (i.e., after formation of the gate electrode and the gate oxide layer). By self-aligning the drift region to the gate electrode, the overlap between the two is minimized, which reduces the capacitance of the device. When capacitance is reduced, performance is improved.

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Nijmegen, Netherlands

Rik Jos