Sony Semiconductor Solutions Corporation

Sony Corporation

Riichi Nishino

Haruhiko Terada

Yoshinori Takahashi

Sho Ohashi

Yotaro Mori

Yoshiyuki Shibahara

Yinta Lin

Hideo Yamaji

Ken Ishii

In a circuit provided with a phase comparator, a lock time is shortened. The phase comparator compares between a phase of a reference clock signal that has been input and a phase of a feedback clock signal, and outputs a comparison result. A charge pump generates a control voltage for control of a frequency of the feedback clock signal on the basis of the comparison result. A feedback unit generates the feedback clock signal in response to the control voltage. A stop detection unit detects whether or not the reference clock signal is stopped, and initializes the comparison result in a case where the reference clock signal is stopped.

Semiconductor integrated circuit, electronic device, and control method for semiconductor integrated circuit

Provided is a memory access control unit that performs writing by dividing write data and an error correction code thereof into a plurality of memories, and acquires presence or absence of occurrence of a verify error in each of the plurality of memories related to the writing. In a case where the verify errors occur in at least any of the plurality of memories, an error bit length acquisition unit acquires bit lengths of the verify errors from the plurality of memories and a write control unit determines that the writing has succeeded if a total bit length of the verify errors falls within a range of a capability allocated to an error bit length tolerance of the error correction code, and determines that the writing has failed if the total bit length of the verify errors falls outside the range.

Memory control circuit, memory, and memory module

Provided is a memory module which includes a controller which, upon reception of a read command including a logical address, converts the logical address included in the read command into a physical address using address lookup information. The controller further inputs a first physical address, which is a portion of the physical address obtained by the conversion, to a non-volatile memory via a first address bus terminal, and then inputs a second physical address, which is a rest of the physical address obtained by the conversion, to the non-volatile memory via a second address bus terminal, to thereby read data corresponding to the physical address obtained by the conversion from the non-volatile memory.

Memory module

A transmitter according to the disclosure includes a driver, a first pre-driver, a second pre-driver, and a power-supply-voltage generator. The driver includes a first transistor and a second transistor. The first transistor has a drain supplied with a first power supply voltage, a source led to an output terminal, and a gate. The second transistor has a drain led to the output terminal, a grounded source, and a gate. The first pre-driver is supplied with a second power supply voltage and drives the gate of the first transistor. The second power supply voltage has a positive correlation with the first power supply voltage. The second pre-driver is supplied with a third power supply voltage and drives the gate of the second transistor. The power-supply-voltage generator generates the first power supply voltage, the second power supply voltage, and the third power supply voltage.

Growing community of inventors

Kanagawa, Japan

Riichi Nishino