Semiconductor Energy Laboratory Co., Ltd.

Riho Kataishi

Toshiki Sasaki

Satoshi Seo

Yoshinobu Asami

Shunpei Yamazaki

Tsunenori Suzuki

Yusuke Nonaka

Shogo Uesaka

Erumu Kikuchi

Hiromi Seo

Daisuke Matsubayashi

Yuichi Sato

Hiroshi Ohki

Ryohei Yamaoka

Yoshikazu Hiura

A light-emitting element includes a cathode, an anode, a light-emitting layer, a first layer, a second layer, and a third layer. The first layer is provided between the cathode and the light-emitting layer. The second layer is provided between the light-emitting layer and the third layer and includes a region in contact with the third layer. The third layer is provided between the second layer and the anode and includes a region in contact with the anode. The first layer and the third layer each include an alkali metal or an alkaline earth metal. The second layer includes a material that has a function of transporting an electron.

Light-emitting element, display device, electronic device, and lighting apparatus

To provide a novel light-emitting element or a novel light-emitting device with high emission efficiency and low power consumption, a light-emitting element having a plurality of light-emitting layers between a pair of electrodes includes a lower electrode, a first light-emitting layer over the lower electrode, a charge-generation layer over the first light-emitting layer, a second light-emitting layer over the charge-generation layer, and an upper electrode over the second light-emitting layer. An emission spectrum of the first light-emitting layer peaks at a longer wavelength than an emission spectrum of the second light-emitting layer. A distance of between a bottom surface of the upper electrode and a bottom surface of the first light-emitting layer is less than or equal to 130 nm.

Light-emitting element

An inverted-structure light-emitting element is provided. One embodiment of the invention disclosed in this specification is a light-emitting element including a cathode, a layer serving as a buffer over the cathode, an electron-injection layer over the layer serving as a buffer, a light-emitting layer over the electron-injection layer, and an anode over the light-emitting layer. The electron-injection layer includes an alkali metal or an alkaline earth metal. The layer serving as a buffer includes an electron-transport material. In the inverted-structure light-emitting element, contact of the alkali metal or alkaline earth metal included in a material of the electron-injection layer with the already formed cathode increases the driving voltage of an EL element and reduces emission efficiency. This problem becomes prominent particularly when the cathode includes an oxide conductive film. To prevent this, the layer serving as a buffer is provided between the cathode and the electron-injection layer.

Light-emitting element, light-emitting device, lighting device, and electronic appliance

A tandem light-emitting element employing an inverted-structure is provided. The light-emitting element includes a cathode, a first EL layer over the cathode, a second EL layer over the first EL layer, an anode over the second EL layer, and an intermediate layer. The intermediate layer is between the first EL layer and the second EL layer. The intermediate layer includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a hole-transport material and an electron acceptor. The third layer includes an alkali metal or an alkaline earth metal. The second layer includes an electron-transport material.

Light-emitting element, lighting device, and electronic appliance

An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an In&#x2014;Ga&#x2014;Zn oxide including c-axis-aligned crystals.

Photoelectric conversion element and imaging device

Multiple light-emitting element device

A light-emitting element with improved heat resistance is provided without losing its advantages such as thinness, lightness, and low power consumption. A light-emitting element is provided which includes a first electrode, a second electrode, and an EL layer between the first electrode and the second electrode, in which the EL layer includes a layer containing a condensed aromatic compound or a condensed heteroaromatic compound, and a layer containing 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) in contact with the layer containing the condensed aromatic compound or the condensed heteroaromatic compound.

Light-emitting element, display module, lighting module, light-emitting device, display device, electronic device, and lighting device

An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoO(2&#x3c;y&#x3c;3)) having an intermediate composition between molybdenum dioxide and molybdenum trioxide. For example, a semiconductor device is formed using a molybdenum oxide material containing molybdenum trioxide (MoO) as its main component and MoO(2&#x3c;y&#x3c;3) at 4% or more.

P-type semiconductor material and semiconductor device

To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer and has favorable electric characteristics. The photoelectric conversion device includes, between a pair of electrodes, a light-transmitting semiconductor layer which has one conductivity type and serves as a window layer, and a silicon semiconductor substrate having a conductivity type for forming a p-n junction or a silicon semiconductor layer having a conductivity type for forming a p-i-n junction. The light-transmitting semiconductor layer can be formed using an inorganic compound containing, as its main component, an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table. The band gap of the metal oxide is greater than or equal to 2 eV.

Photoelectric conversion device

To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer, the photoelectric conversion device includes a first electrode, a first semiconductor layer formed over the first electrode, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor layer formed over the second semiconductor layer, and a second electrode formed over the third semiconductor layer; and the first semiconductor layer is a light-transmitting semiconductor layer containing an organic compound and an inorganic compound, and the second semiconductor layer and the third semiconductor layer are each a semiconductor layer containing an organic compound.

Provided is a technique for manufacturing a photoelectric conversion element using a dense crystalline semiconductor film without a cavity between crystal grains. A method of manufacturing a photoelectric conversion device having a first electrode, a unit cell, and a second electrode over a substrate includes the steps of: forming a plasma region between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a chamber of a plasma CVD apparatus is set to from 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to from 1 mm to 20 mm, preferably, 4 mm to 16 mm; forming deposition precursors including a crystalline semiconductor in a gas phase including the plasma region; forming a crystal nucleus having a grain size of from 5 nm to 15 nm by depositing the deposition precursors; and forming a semiconductor film having a first conductivity type, a semiconductor film effective in photoelectric conversion, or a semiconductor film having a first conductivity type in the unit cell, by growing a crystal from the crystal nucleus.

Growing community of inventors

Kanagawa, Japan

Riho Kataishi