Sharp Kabushiki Kaisha Corporation

Rihito Suganuma

Toshihiko Sakai

Kazuya Tsujino

Liumin Zou

Masamichi Kobayashi

Teruaki Higo

Chikao Okamoto

Naoki Asano

Natsuko Fujiwara

Takeshi Kamikawa

Masatomi Harada

Tokuaki Kuniyoshi

A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Photovoltaic devices and photovoltaic modules

Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8&#xd7;10cmor more, and is lower than the dopant concentration of the first concentration layer.

Photoelectric conversion device

A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.

Growing community of inventors

Sakai, Japan

Rihito Suganuma