Carl Zeiss Sms Ltd.

Rigo Richter

Thomas Scheruebl

Ulrich Matejka

Oliver Kienzle

Holger Seitz

Axel Zibold

Norbert Rosenkranz

Thomas Scherübl

Arne Seyfarth

Yuji Kobiyama

Eric Poortinga

In mask inspection, the defects that are of interest are primarily those that will also show up on wafer exposure. The aerial images generated in the resist and by emulation should be as identical as possible. This also applies to methods in which an overall structure that is divided into at least two substructures on at least two masks. A system and a method are provided for emulating a photolithographic process for generating on a wafer an overall structure that is divided into at least two substructures on at least two masks. The method includes generating aerial images of the at least two substructures, at least one of the aerial images being captured with a mask inspection microscope; correcting, by using a processing unit, errors in the at least one aerial image captured with a mask inspection microscope; and overlaying the aerial images of the at least two substructures to form an overall aerial image with the overall structure.

Method for emulation of a photolithographic process and mask inspection microscope for performing the method

The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.

Method and apparatus for measuring of masks for the photo-lithography

The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.

Method and apparatus for analyzing a group of photolithographic masks

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Zeulenroda-Triebes, Germany

Rigo Richter