Kyoto University

Flosfia Inc.

Riena Jinno

Toshimi Hitora

Takashi Shinohe

Shizuo Fujita

Kentaro Kaneko

Tokiyoshi Matsuda

In a first aspect of a present inventive subject matter, a semiconductor device includes a first semiconductor layer that is an electron-supply layer containing as a major component a first semiconductor crystal with a metastable crystal structure; and a second semiconductor layer that is an electron-transit layer containing as a major component a second semiconductor crystal with a hexagonal crystal structure. The first semiconductor crystal contained in the first semiconductor layer is different in composition from the second semiconductor crystal comprised in the second semiconductor layer.

Growing community of inventors

Kyoto, Japan

Riena Jinno