Matsushita Electric Industrial Co., Ltd.

Other

Rieko Nishio

Takumi Yamaguchi

Takahiro Yamada

Hiroyoshi Komobuchi

Masayuki Masuyama

Toshihiro Kuriyama

Yoshikazu Chatani

Hiroaki Uozumi

Hiroyuki Senda

Naoto Niisoe

Toshihiko Yano

Hitoshi Doi

Hiroe Ogata

On a light shielding film, an anti-oxidation layercovering at least the light shielding filmis formed. The anti-oxidation layeris formed under a condition which does not oxidize a surface of the light shielding film. The anti-oxidation layeris formed of a high melting point metal compound film having a light shielding property or an insulating film having a light transmissive property. Thus, the scattering ratio of the incident light at the surface of the light shielding filmcan be uniform among all the pixels, and as a result, a solid state imaging device having suppressed sensitivity non-uniformity can be realized. Since the surface of the light shielding filmis not oxidized, the thickness of the light shielding filmcan be reduced. Thus, the present invention can comply with the demand for size reduction of the pixels.

Solid state imaging device and method for producing the same

A solid-state imaging device production method is provided. A light-receiving sectionis formed on a semiconductor substrate. A first insulating filmis formed on a light-receiving sectionand the semiconductor substrate. A metal film for wiring is formed on the first insulating film. A protection filmis formed on the metal film. A resist film is formed on a predetermined region of the protection film. A portion of the protection filmand a portion of the metal film is removed by using the resist film to form a wirewhose upper face is covered by the protection film. A hydrogen-containing second insulating filmis formed on the wireand the first insulating film. A heating process is performed for the second insulating film. An anisotropic etching process is performed for the entire surface of the second insulating filmto remove the second insulating film

Solid-state imaging device production method and solid-state imaging device

The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.

Semiconductor device having heat detecting element and insulating cavity and method of manufacturing thereof

Semiconductor device having heat detecting element and insulating cavity and method of manufacturing the same

A method for manufacturing a solid-state imaging device includes forming a transfer channel portion and a light-receiving portion in a silicon substrate; forming a silicon oxide film on the silicon substrate; forming a silicon nitride film on the silicon oxide film, the silicon nitride film acting as a gate insulating film together with the silicon oxide film above the transfer channel portion and acting as an anti-reflection film above the light-receiving portion; forming a protection film on the silicon nitride film; forming a polysilicon film above the silicon nitride film via the protection film at least above the light-receiving portion; and etching the polysilicon film so as to form a transfer electrode above the transfer channel portion. The etching of the polysilicon film is carried out so that the polysilicon film is removed above the light-receiving portion while the protection portion remains.

Method for manufacturing solid-state imaging device

Growing community of inventors

Kyoto, Japan

Rieko Nishio