Tokyo Electron Limited

Rie Inazawa

Siddhartha Panda

Koichiro Inazawa

Vaidyanathan Balasubramaniam

Rich Wise

Arpan Mahorawala

A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NHand a hydrocarbon gas such as at least one of CH, CH, CH, CH, CH, CH, CH, CH, CH, CH, CH, CH, CH, CH, and CH. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH), and a passivation gas.

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Hokuto, Japan

Rie Inazawa