Hitachi, Ltd.

Other

Renesas Technology Corp.

Hitachi Cable, Inc.

Rie Hattori

Akira Nagai

Shuji Eguchi

Nobutake Tsuyuno

Hiroyoshi Kokaku

Masanori Segawa

Kunihiro Tsubosaki

Makoto Kitano

Masahiko Ogino

Ichiro Anjoh

Chuichi Miyazaki

Mamoru Mita

Makoto Morishima

Norio Okabe

Toshiak Ishii

Asao Nishimura

Toshiaki Ishii

Satoshi Nakamura

Takumi Ueno

Yasuhide Sugawara

Ogino Masahiko

Ryou Moteki

A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for the mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200&#x2013;250&#xb0; C.).

Circuit tape having adhesive film semiconductor device and a method for manufacturing the same

A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200-250&deg; C.).

Circuit tape having adhesive film, semiconductor device, and a method for manufacturing the same

A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for the mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200-250.degree. C.).

Circuit tape having adhesive film, semiconductor device, and a method

A resin encapsulated semiconductor element is encapsulated with resin composition containing an organic compound selected from the group consisting of organobromine compounds, organophosphorus compounds and organonitrogen compounds, an inorganic filler, and a metal borate. The obtained resin encapsulated semiconductor element has the same flame resistance as a conventional semiconductor element which is encapsulated with a resin composition containing a halogen and antimony compound, and furthermore, has remarkably improved reliabilities regarding moisture resistance and storing at a high temperature by effects of the contained metal borate for suppressing generation of or trapping released gas components, such as halogen or phosphorus, and others.

Resin sealed semiconductor devices and a process for manufacturing the

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Hitachinaka, Japan

Rie Hattori