Texas Instruments Corporation

Ricky A Jackson

Erika Lynn Mazotti

William David French

Dok Won Lee

Brian Goodlin

Ting-Ta Yen

Sudtida Lavangkul

Walter Baker Meinel

Nicholas Stephen Dellas

YungShan Chang

Henry Litzmann Edwards

Rajarshi Mukhopadhyay

Kurt Peter Wachtler

Neng Jiang

Marco A Gardner

Dan Carothers

Debarshi Basu

Ben Cook

Benjamin Stassen Cook

Thomas Dyer Bonifield

Neil Gibson

Keith Ryan Green

Kalin Valeriev Lazarov

Wai Lee

Karen Hildegard Ralston Kirmse

ChangFeng F Xia

Byron J R Shulver

Jeff W Ritchison

Arunthathi Sivasothy

Mark R Visokay

Howard L Tigelaar

Byron Lovell Williams

Rick L Wise

Stuart M Jacobsen

Fuchao Wang

Ann Gabrys

Honglin Guo

Asad Mahmood Haider

Elizabeth Costner Stewart

Toan Tran

Django Trombley

Jo Bito

Cesar M Garza

Abha Rani Singh

Jeff A West

Maria Wang

Yung Shan Chang

Jeronimo Segovia-fernandez

Melissa M Hewson

Ryan E Priebe

Keegan Shaun Martin

Tim A Taylor

Kandis Meinel

Asad M Hauder

Huiyao Chen

Changfeng Xia

An integrated circuit (IC) resonator module for an IC package includes an acoustic resonator having a surface and a Bragg reflector adhered to the surface of the acoustic resonator. The Bragg reflector includes low impedance layers formed of a first material with a first acoustic impedance and a high impedance layer formed of a second material with a second acoustic impedance. The second acoustic impedance is greater than the first acoustic impedance. The Bragg reflector further includes a Bragg grating layer formed of randomly or periodically spaced patches of the second material separated by vias filled with the first material.

Acoustic resonator

An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.

Integrated photodetector

A semiconductor system includes a substrate. The substrate has a front side and a back side. A device is formed on the front side of the substrate. A vertical spring is etched in the substrate about the device. A trench is etched in the front side of the substrate about the device. A wall of the trench forms a side of the vertical spring.

Stress isolation using three-dimensional trenches

Monolithic humidity sensor devices, and methods of manufacture. The devices include circuitry on or over a silicon substrate. A primary passivation barrier is formed over the circuitry with conductive vias therethrough; a capacitor, comprising metal fingers with spaces therebetween, is formed above said primary passivation barrier and electrically coupled by the conductive vias to the circuitry. A secondary passivation barrier is formed over the capacitor. A hygroscopic material layer is formed over the secondary passivation barrier, wherein the capacitor is operable to exhibit a capacitance value responsive to moisture present in the hygroscopic material layer and the circuitry is operable to generate a signal responsive to said capacitance value.

Monolithic humidity sensor devices and methods of manufacture

A microelectronic device has a Hall sensor that includes a Hall plate in a semiconductor material. The Hall sensor includes contact regions in the semiconductor material, contacting the Hall plate. The Hall sensor includes an isolation structure with a dielectric material contacting the semiconductor material, on at least two opposite sides of each of the contact regions. The isolation structure is laterally separated from the contact regions by gaps. The Hall sensor further includes a conductive spacer over the gaps, the conductive spacer being separated from the semiconductor material by an insulating layer.

Hall sensor with dielectric isolation and p-n junction isolation

An example apparatus includes a semiconductor wafer with a plurality of probe pads each formed centered in scribe streets and intersected by saw kerf lanes. Each probe pad includes a plurality of lower level conductor layers arranged in lower level conductor frames, a plurality of lower level vias extending vertically through lower level insulator layers and electrically coupling the lower level conductor frames; a plurality of upper level conductor layers, each forming two portions on two outer edges of the probe pad, the two portions aligned with, spaced from, and on opposite sides of the saw kerf lane, the coverage of the upper level conductor layers being less than about twenty percent; and a plurality of upper level vias extending vertically through upper level insulator layers and coupling the upper level conductor layers electrically to one another and to the lower level conductor layers. Methods are disclosed.

Methods and apparatus for scribe street probe pads with reduced die chipping during wafer dicing

An integrated circuit is formed by forming an isolation trench through at least a portion of an interconnect region, at least 40 microns deep into a substrate of the integrated circuit, leaving at least 200 microns of substrate material under the isolation trench. Dielectric material is formed in the isolation trench at a substrate temperature no greater than 320&#xb0; C. to form an isolation structure which separates an isolated region of the integrated circuit from at least a portion of the substrate. The isolated region contains an isolated component. The isolated region of the integrated circuit may be a region of the substrate, and/or a region of the interconnect region. The isolated region may be a first portion of the substrate which is laterally separated from a second portion of the substrate. The isolated region may be a portion of the interconnect region above the isolation structure.

Isolation of circuit elements using front side deep trench etch

A micromechanical system (MEMS) acoustic wave resonator is formed on a base substrate. A piezoelectric member is mounted on the base substrate. The piezoelectric member has a first electrode covering a first surface of the piezoelectric member and a second electrode covering a second surface of the piezoelectric member opposite the first electrode, the second electrode being bounded by a perimeter edge. A first guard ring is positioned on the second electrode spaced apart from the perimeter edge of the second electrode.

Buk acoustic wave resonator with guard rings having recessed space from electrode edge and periodic designs

A stacked-die oscillator package includes an oscillator circuit die having inner bond pads, and outer bond pads, and a bulk acoustic wave (BAW) resonator die having a piezoelectric transducer with a first and second BAW bond pad on a same side coupled to a top and bottom electrode layer across a piezoelectric layer. A first metal bump is on the first BAW bond pad and a second metal bump is on the second BAW bond pad flip chip bonded to the inner bond pads of the oscillator circuit die. A polymer material is in a portion of a gap between the BAW and oscillator circuit die.

Stacked-die bulk acoustic wave oscillator package

A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a patterned magnetic concentrator positioned above the surface of the substrate, and a protective overcoat layer positioned above the magnetic concentrator.

Magnetic flux concentrator for in-plane direction magnetic field concentration

An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.

Stress compensation for piezoelectric optical MEMS devices

A method for creating a double Bragg mirror is provided. The method comprises providing a wafer having a plurality of bulk acoustic wave (BAW) devices at an intermediate stage of manufacturing. A first dielectric layer is deposited over the wafer. A plurality of as-deposited thicknesses of the dielectric layer are determined, each as-deposited thickness corresponding to one BAW device from the plurality of BAW devices. A corresponding trimmed dielectric layer over each of the BAW devices is formed by removing a portion of the dielectric layer over each of the BAW devices, with a thickness of the removed portion determined from a corresponding as-deposited thickness and a target thickness. A Bragg acoustic reflector that includes the corresponding trimmed dielectric layer is formed over each of the BAW devices.

Method for creating double bragg mirror for tight frequency reference control

Various examples provide an electronic device that includes first and second resistor segments. Each of the resistor segments has a respective doped resistive region formed in a semiconductor substrate. The resistor segments are connected between first and second terminals. The first resistor segment is configured to conduct a current in a first direction, and the second resistor segment is configured to conduct the current in a second different direction. The directions may be orthogonal crystallographic directions of the semiconductor substrate.

Trimmable silicon-based thermistor with reduced stress dependence

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Garland, TX, United States of America

Ricky A Jackson