Applied Materials, Inc.

Rick Kustra

Kaushik Comandoor Alayavalli

Jay D Pinson, Ii

Anup Kumar Singh

Abhijit Basu Mallick

Ganesh Balasubramanian

Pramit Manna

Bhaskar Kumar

Bo Qi

Krishna Nittala

Vinayak Vishwanath Hassan

Huiyuan Wang

Juan Carlos Rocha-Alvarez

Canfeng Lai

Badri N Ramamurthi

Akshay Dhanakshirur

Sathya Swaroop Ganta

A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.

Showerhead design to control stray deposition

Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

Method of using dual frequency RF power in a process chamber

Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 &#x212b; in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

Examples of the present technology include semiconductor processing methods to form boron-containing materials on substrates. Exemplary processing methods may include delivering a deposition precursor that includes a boron-containing precursor to a processing region of a semiconductor processing chamber. A plasma may be formed from the deposition precursor within the processing region of the semiconductor processing chamber. The methods may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, where the substrate is characterized by a temperature of less than or about 50&#xb0; C. The as-deposited boron-containing material may be characterized by a surface roughness of less than or about 2 nm, and a stress level of less-than or about &#x2212;500 MPa. In some embodiments, a layer of the boron-containing material may function as a hardmask.

Deposition of low-stress boron-containing layers

Examples of the present technology include semiconductor processing methods that provide a substrate in a substrate processing region of a substrate processing chamber, where the substrate is maintained at a temperature less than or about 50&#xb0; C. An inert precursor and a hydrocarbon-containing precursor may be flowed into the substrate processing region of the substrate processing chamber, where a flow rate ratio of the inert precursor to the hydrocarbon-containing precursor may be greater than or about 10:1. A plasma may be generated from the inert precursor and the hydrocarbon-containing precursor, and a carbon-containing material may be deposited from the plasma on the substrate. The carbon-containing material may include diamond-like-carbon, and may have greater than or about 60% of the carbon atoms with sphybridized bonds.

Deposition of low-stress carbon-containing layers

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San Jose, CA, United States of America

Rick Kustra