Intermolecular, Inc.

Applied Materials, Inc.

Rick Endo

James Tsung

Kurt H Weiner

Indranil De

Maosheng Zhao

Alexander S Ko

Steven Verhaverbeke

Jeremy Cheng

J Kelly Truman

Jay Dedontney

Ralph M Wadensweiler

A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

Combinatorial process system

The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.

Multi-region processing system

A structure for independently supporting a wafer and a mask in a processing chamber is provided. The structure includes a set of extensions for supporting the wafer and a set of extensions supporting the mask. The set of extensions for the wafer and the set of extensions for the mask enable independent movement of the wafer and the mask. In one embodiment, the extensions are affixed to an annular ring which is capable of moving in a vertical direction within the processing chamber. A processing chamber, a mask, and a method for combinatorially processing a substrate are also provided.

Method and system for mask handling in high productivity chamber

A method of combinatorially processing a substrate and combinatorial processing chamber are provided. The processing chamber includes opposing annular rings defining a conductance gap that extends radially outward. The opposing annular rings are configured to vary the conductance gap in-situ. The variation of the conductance gap is another parameter for processing regions of a substrate differently to evaluate the impact of the conductance variation on a deposition process.

Method and apparatus for variable conductance

Multi-region processing system and heads

An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

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San Carlos, CA, United States of America

Rick Endo