First Solar, Inc.

Rick C Powell

Zhibo Zhao

Markus Gloeckler

Jigish Trivedi

Feng Liao

Gang Xiong

Akhlesh Gupta

Benjamin Milliron

Dan Damjanovic

John Barden

Arnold Allenic

Kenneth Ring

Rui Shao

Andrei Los

Roger T Green

Anke Abken

Upali Jayamaha

Peter Meyers

Aaron Roggelin

Zhigang Ban

Gopal Mor

Dan Mao

Benyamin Buller

Xilin Peng

Daniel Damjanovic

David K Hwang

David J Eaglesham

Ming Lun Yu

Pratima V Addepalli

Jongwoo Choi

Charles Edward Wickersham

Oleh Petro Karpenko

Xiaoping Li

Aravamuthan Varadarajan

San Yu

Sreenivas Jayaraman

Jing Guo

Chong Lim

Jianjun Wang

Scott Christensen

Oomman K Varghese

Kuntal Kumar

Le Chen

Vera Steinmann

David Ho

Tze-Bin Song

Dirk Weiss

Nirav Vora

Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

Methods for perovskite device processing by vapor transport deposition

A photovoltaic device includes an electron blocking layer (EBL) and an absorber layer. The EBL is positioned between the absorber layer and a back contact layer. A material of the EBL is a cadmium zinc telluride CdZnTe, and a material of the absorber layer is a cadmium telluride selenide CdTeSeproducing a lattice mismatch between the materials of the EBL and between the materials of the absorber of less than about two tenths of a percent when x˜y and has a value less than about 0.4.

Photovoltaic devices and methods of forming the same

A photovoltaic cell can include a dopant in contact with a semiconductor layer.

Photovoltaic devices including doped semiconductor films

A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Photovoltaic devices and method of manufacturing

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

Photovoltaic device including a p-n junction and method of manufacturing

An improved feeder system and method for continuous vapor transport deposition that includes at least two vaporizers couple to a common distributor through an improved seal for separately vaporizing and collecting at least any two vaporizable materials for deposition as a material layer on a substrate. Multiple vaporizer provide redundancy and allow for continuous deposition during vaporizer maintenance and repair.

Vapor transport deposition method and system for material co-deposition

A deposition system and method includes a deposition source, a roll conveyor and at least one shield positioned at a location proximate to the deposition source.

System and method for transport

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

An improved feeder system and method for continuous vapor transport deposition that includes at least two vaporizers coupled to a common distributor through an improved seal for separately vaporizing and collecting at least any two vaporizable materials for deposition as a material layer on a substrate. Multiple vaporizers provide redundancy and allow for continuous deposition during vaporizer maintenance and repair.

A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSTe) layer as are methods of forming such a photovoltaic device.

High efficiency photovoltaic device employing cadmium sulfide telluride and method of manufacture

Photovoltaic device including a P-N junction and method of manufacturing

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Perrysburg, OH, United States of America

Rick C Powell