Kla Tencor Corporation

Kla-tencor Technologies Corporation

The United States of America As Represented by the Department of Energy

Kla Corporation

Richard William Solarz

Ilya Bezel

Anatoly Shchemelinin

Yung-Ho Alex Chuang

David R Shafer

Bin-Ming Benjamin Tsai

David Lee Brown

Kenneth P Gross

Matthew Derstine

Anant Chimmalgi

Lauren Wilson

Joshua Wittenberg

Rahul Yadav

Raymond John Beach

Eugene Shifrin

Steven R Lange

Oleg Khodykin

Shiow-Hwei Hwang

Xiumei Liu

Georg F Albrecht

Brooke Bruguier

Sebaek Oh

Aizaz Bhuiyan

Stephane P Durant

Bosheng Zhang

David L Brown

X-ray imaging and classification of volume defects within a three-dimensional structure includes identifying one or more volume defects within a three-dimensional structure of a sample and acquiring, with a transmission-mode x-ray diffraction imaging tool, one or more coherent diffraction images of the one or more identified volume defects. The process includes classifying the one or more volume defects within a volume of the three-dimensional structure based on the one or more coherent diffraction images, and training an additional optical or electron-based inspection tool based on the one or more classified defects.

System and method for x-ray imaging and classification of volume defects

A system for forming a laser-sustained plasma includes a gas containment element, an illumination source configured to generate pump illumination, and a collector element configured to focus the pump illumination from the pumping source into the volume of the gas mixture in order to generate a plasma within the volume of the gas mixture that emits broadband radiation. The gas containment element may be configured to contain a volume of a gas mixture including a first gas component and a second gas component. The second gas component suppresses at least one of a portion of the broadband radiation associated with the first gas component or radiation by one or more excimers associated with the first gas component from a spectrum of radiation exiting the gas mixture.

System and method for inhibiting VUV radiative emission of a laser-sustained plasma source

Disclosed are methods and apparatus for generating a sub-200 nm continuous wave (cw) laser. A laser apparatus includes a chamber for receiving at least a rare gas or rare gas mixtures and a pump laser source for generating at least one cw pump laser focused in the chamber for generating at least one laser-sustained plasma in the chamber. The laser apparatus further includes a system for forming an optical cavity in which the at least one laser-sustained plasma serves as an excitation source for producing at least one cw laser having a wavelength that is below about 200 nm. In one aspect, the at least one laser-sustained plasma has a shape that substantially matches a shape of the optical cavity.

Sub 200nm laser pumped homonuclear excimer lasers

A laser-sustained plasma light source for transverse plasma pumping includes a pump source configured to generate pumping illumination, one or more illumination optical elements and a gas containment structure configured to contain a volume of gas. The one or more illumination optical elements are configured to sustain a plasma within the volume of gas of the gas containment structure by directing pump illumination along a pump path to one or more focal spots within the volume of gas. The one or more collection optical elements are configured to collect broadband radiation emitted by the plasma along a collection path. Further, the illumination optical elements are configured to define the pump path such that pump illumination impinges the plasma along a direction transverse to a direction of propagation of the emitted broadband light of the collection path such that the pump illumination is substantially decoupled from the emitted broadband radiation.

System and method for transverse pumping of laser-sustained plasma

A system for forming a laser-sustained plasma includes a gas containment element, an illumination source configured to generate pump illumination, and a collector element. The gas containment element is configured to contain a volume of a gas mixture. The collector element is configured to focus the pump illumination from the pumping source into the volume of the gas mixture contained within the gas containment element in order to generate a plasma within the volume of the gas mixture that emits broadband radiation. The gas mixture filters one or more selected wavelengths of radiation emitted by the plasma.

System and method for inhibiting radiative emission of a laser-sustained plasma source

A method of performing a hot test of a packaged phosphor converted light-emitting diode (pc-LED) includes selectively heating portions of the phosphor layer using a laser to provide a predetermined temperature gradient in the phosphor layer. The selective heating can directly heat the silicone in a silicone-based phosphor layer, or directly heat the active ion(s) of the phosphor in a Lumiramic&#x2122;-based phosphor or even the active ion(s) of a silicone-based phosphor layer. A current is applied to the InGaN film to establish a predetermined temperature at the InGaN film junction, the film junction being adjacent to the phosphor layer. Photometric measurements are performed on the LED after the selective heating and during the applied electroluminescent current. This method quickly establishes the temperatures and temperature gradients in the LED consistent with those of an operating, product-level LED, thereby ensuring accurate binning of the LED.

High throughput hot testing method and system for high-brightness light-emitting diodes

Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100&#xd7; within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

EUV high throughput inspection system for defect detection on patterned EUV masks, mask blanks, and wafers

A method of performing a hot test of a wafer-level, packaged high-brightness phosphor converted light-emitting diode (pc-HBLED) includes selectively heating portions of the phosphor layer using a laser to provide a predetermined temperature gradient in the phosphor layer. The selective heating can directly heat the silicone in a silicone-based phosphor layer, or directly heat the active ion(s) of the phosphor in a Lumiramic&#x2122;-based phosphor or even the active ion(s) of a silicone-based phosphor layer. A current is applied to the InGaN film to establish a predetermined temperature at the InGaN film junction, the film junction being adjacent to the phosphor layer. Photometric measurements are performed on the HBLED after the selective heating and during the applied electroluminescent current. This method quickly establishes the temperatures and temperature gradients in the HBLED consistent with those of an operating, product-level HBLED, thereby ensuring accurate binning of the HBLED.

A method of sustaining a plasma, by focusing a first wavelength of electromagnetic radiation into a gas within a volume, where the first wavelength is substantially absorbed by a first species of the gas and delivers energy into a first region of a plasma having a first size and a first temperature. A second wavelength of electromagnetic radiation is focused into the first region of the plasma, where the second wavelength is different than the first wavelength and is substantially absorbed by a second species of the gas and delivers energy into a second region of the plasma region within the first region of the plasma having a second size that is smaller than the first size and a second temperature that is greater than the first temperature.

Multi-wavelength pumping to sustain hot plasma

An apparatus for inspecting a specimen, such as a semiconductor wafer, is provided. The apparatus comprises a laser energy source, such as a deep ultraviolet (DUV) energy source and an optical fiber arrangement. The optical fiber arrangement comprises a core surrounded by a plurality of optical fibers structures used to frequency broaden energy received from the laser energy source into frequency broadened radiation. The frequency broadened radiation is employed as an illumination source for inspecting the specimen. In one aspect, the apparatus comprises a central core and a plurality of structures generally surrounding the central core, the plurality of fibers surround a hollow core fiber filled with a gas at high pressure, a tapered photonic fiber, and/or a spider web photonic crystalline fiber, configured to receive light energy and produce frequency broadened radiation for inspecting the specimen.

Coherent DUV illumination for semiconductor wafer inspection

A wafer inspection system includes a laser droplet plasma (LDP) light source that generates light with sufficient radiance to enable bright field inspection at wavelengths down to 40 nanometers. Light generated by the LDP source is directed to the wafer and light from the illuminated wafer is collected by a high NA objective with all reflective elements. A detector detects the collected light for further image processing. The LDP source includes a droplet generator that dispenses droplets of a feed material. An excitation light generated by a laser is focused on a droplet of the feed material. The interaction of the excitation light with the droplet generates a plasma that emits illumination light with a radiance of at least 10 W/mm-sr within a spectral range from 40 nanometers to 200 nanometers.

Optical imaging system with laser droplet plasma illuminator

A method of generating a photoluminescence map for an indium gallium nitride (InGaN) well can include presenting data on a pixel by pixel basis. The data can be generated as a function of emission wavelength, line width of emission, polarization of emission, and intensity of emission. The data can also be generated as a function of excitation polarization and polarization angle orientation with respect to film crystalline axes of the InGaN well. The data can also be generated as a function of multiple wavelengths of light to generate the photoluminescence map. The photoluminescence maps can be correlated to device internal quantum efficiency as measured in test devices. The resulting correlation maps can serve as line monitors of indium rich InGaN wafers used for green LEDs.

Growing community of inventors

Danville, CA, United States of America

Richard William Solarz