Mcdonnell Douglas Corporation

Richard W Rodgers

Yukun Hsia

An address drive circuit for use on programmable, nonvolatile, semiconductor memories which use either Metal Nitrite Oxide Semiconductor (MNOS) or 'floating gate' transistors for Electrically Erasable Programmable Read Only Memory Storage (EEPROMS). The inventive drive circuit is based on the use of prior art high voltage Complementary Metal Oxide Semiconductors (CMOS) transistors which have junction diode breakdown limits exceeding the maximum 'device drain voltage' (V.sub.DD) to be switched. This circuit has negligible direct current power dissipation, high speed memory read/write capability, and requires minimum physical installation area.

Complementary metal oxide semiconductors address drive circuit

The disclosed solid state mass memory system comprises an adaptive, wafer scale integration, nonvolatile mass memory system organized as a stack of individual memory wafer modules with a memory system control means.

Growing community of inventors

Santa Ana, CA, United States of America

Richard W Rodgers