Nxp USA, Inc.

Nxp B.v.

Richard Te Gan

Zhiwei Gong

Michael B Vincent

Vivek Gupta

Scott M Hayes

Burton Jesse Carpenter

Rushik Prabhudas Tank

Jinmei Liu

Kabir J Mirpuri

James Raymond Spehar

Chung Hsiung Ho

Wayne Hsiao

A method of manufacturing a packaged semiconductor device is provided. The method includes placing a plurality of semiconductor die on a carrier substrate. The plurality of semiconductor die and an exposed portion of the carrier substrate are encapsulated with an encapsulant. A cooling fixture includes a plurality of nozzles and is placed over the encapsulant. The encapsulant is cooled by way of air exiting the plurality of nozzles. A property of air exiting a first nozzle of the plurality of nozzles is different from that of a second nozzle of the plurality of nozzles.

Semiconductor device packaging warpage control

A method of tie bar removal is provided. The method includes forming a leadframe including a tie bar and a flag. The tie bar extends from a side rail of the leadframe and has a distal portion at an angle different from a plane of the flag. A semiconductor die is attached to the flag of the leadframe. A molding compound encapsulates the semiconductor die, a portion of the leadframe, and the distal portion of the tie bar. The tie bar is separated from the molding compound with an angled cavity remaining in the molding compound.

Tie bar removal for semiconductor device packaging

A method of manufacturing a semiconductor device packaging panel is provided. The method includes forming a panel having an active side and a backside. The panel includes a plurality of semiconductor die encapsulated with an encapsulant. An active surface of the semiconductor die is exposed on the active side of the panel. A warpage control carrier is attached onto the backside of the panel. The warpage control carrier includes an electroactive element configured for substantially flattening the panel while a control voltage is applied to the electroactive element.

A method of manufacturing a carrier for semiconductor device packaging is provided. The method includes forming a carrier having a plurality of plateau regions separated by a plurality of channels. The carrier is configured and arranged to support a plurality of semiconductor die during a packaging operation. The plurality of channels is filled with a material configured to control warpage of the carrier.

A semiconductor device having an integrated antenna is provided. The semiconductor device includes a base die having an integrated circuit formed at an active surface and a cap die bonded to the backside surface of the base die. A metal trace is formed over a top surface of the cap die. A cavity is formed under the metal trace. A conductive via is formed through the base die and the cap die interconnecting the metal trace and a conductive trace of the integrated circuit.

Semiconductor device having integrated antenna and method therefor

A method of manufacturing a semiconductor device packaging panel is provided. The method includes forming a panel by placing a plurality of semiconductor die on a major side of a carrier substrate and encapsulating with an encapsulant the plurality semiconductor die and the major side of the carrier substrate. A plurality of warpage control features are formed with the encapsulant while encapsulating. The method further includes placing the panel onto a warpage control fixture to substantially flatten the panel. The plurality of warpage control features interlock with mating features of the warpage control fixture.

A wafer-level chip-scale package (WLCSP) includes an integrated circuit (IC) chip, and die bonding pads with a redistribution layer (RDL) having multiple via structures located directly below the footprint of a solder ball placed on the bonding pad. The via structures electrically connect the solder ball to a top metal layer of the IC chip. The RDL may extend beyond the solder ball's footprint and have additional vias that connect to the top metal layer, including vias located under and connected to other solder balls. The bonding pads have a low R-on resistance and are not susceptible to thermal-induced cracking.

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Chandler, AZ, United States of America

Richard Te Gan