International Business Machines Corporation

Richard Stutz

Chung H Lam

Gerhard Ingmar Meijer

Johannes Georg Bednorz

Rolf Allenspach

Daniel Widmer

Bruno Michel

Emmanuel Delamarche

Heiko Wolf

Andre Bernard

J&ouml;ns G Hilborn

Christian Donzel

A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400&#xb0; C.

Non-volatile resistance switching memory

Processes, apparatus and systems for depositing a switching material that is switchable between conductivity states and where the states are persistent. The invention further relates to a microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400&#xb0; C.

A method for fabricating silicone elastomer stamps with hydrophilic surfaces is provided. The concept of polymer grafting is used to produce the stamps. The stamps thus produced have the great advantage that grafting of a thin hydrophilic polymer on a hydrophobic PDMS surface can render PDMS stamps permanently hydrophilic. With such stamps it becomes possible to print aqueous or highly polar inks reproducibly over days and weeks.

Silicone elastomer stamp with hydrophilic surfaces and method of making same

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Yorktown Heights, NY, United States of America

Richard Stutz