Robert Boschgmbh

Infineon Technologies Ag

Seg Automotive Germany Gmbh

Richard Spitz

Alfred Goerlach

Herbert Goebel

Vesna Biallas

Irene Jennrich

Barbara Will

Siegfried Schuler

Helga Uebbing

Gert Wolf

Anton Mindl

Werner Pfander

Peter Urbach

Markus Mueller

Holger Haussmann

Doerte Eimers-Klose

Karin Hamsen

Franz Laermer

Werner Herden

Dietrich Bonart

Manfred Vogel

Andrea Schilp

Dirk Ahlers

Ning Qu

Helmut Suelzle

Friedhelm Meyer

Rainer Topp

Lothar Gademann

Carolin Tolksdorf

Johann Konrad

Uwe Knappenberger

Achim Henkel

Klaus Heyke

Martin Frey

Henning Hauenstein

Christoph Ruf

Rolf Jaros

Stephan Ernst

Henning Stilke

Alexander Wallrauch

Hans-Reiner Krauss

Hans Staudenmaier

Hans-Joachim Seidel

Dana Keppeler

Hubert Zoller

Maria Del Rocio Martin Lopez

Robert Kolb

Christian Adamski

Roland Riekert

Jochen Dietrich

Armin Vohr

Ulrich Schaefer

Uwe Koehler

Herbert Bohm

Holger Hausmann

Friederike Hahn

A generator device for the voltage supply of a motor vehicle is equipped with at least one rectifying element for rectifying an alternating voltage provided by a generator. The rectifying element has an n-channel MOS field-effect transistor in which the gate, the body area, and the source area are electrically fixedly connected to one another and in which the drain area is used as a cathode.

Generator device for the voltage supply of a motor vehicle

High-efficiency Schottky diodes (HED) and rectifier systems having such semiconductor devices are provided, which Schottky diodes (HED) are composed of at least one Schottky diode combined with an additional semiconductor element, e.g., with magnetoresistors (TMBS) or with pn diodes (TJBS), and have trenches. Such high-efficiency Schottky diodes make it possible to construct rectifiers which are suitable for higher temperatures and can therefore be used in motor vehicle generators, without particular cooling measures such as heat sinks being required.

Semiconductor device and rectifier system

A curable reaction resin system can be used for example as a casting compound, molding compound, or high-temperature resin, and is to be processed as a two-component compound. The system has a first reaction resin component and a second reaction resin component, the first reaction resin component being epoxy-free and realized on the basis of a cyanate ester.

Curable reaction resin system

In a method for manufacturing a diode, a semiconductor crystal wafer is used to produce a p-n or n-p junction, which extends in planar fashion across the top side of a semiconductor crystal wafer. Separation edges form perpendicularly to the top side of the semiconductor crystal wafer, which edges extend across the p-n or n-p junction. The separation of the semiconductor crystal wafer is achieved in that, starting from a disturbance, a fissure is propagated by local heating and local cooling of the semiconductor crystal wafer. The separation fissure thus formed extends along crystal planes of the semiconductor crystal, which avoids the formation of defects in the area of the p-n or n-p junction.

Method for manufacturing a diode, and a diode

A diode, e.g., a press-fit power diode for a rectifier in a motor vehicle, includes a semiconductor chip which is connected to a head wire and a base via solder layers. A plastic sheathing, which is situated at least in the chip area and includes a plastic sleeve, enables a hard casting compound to be used and establishes a mechanical connection between the base and the head wire and forms a housing together with the base. An undercut, which extends into the casting compound, and a gap between the sleeve and the edge of the base achieve a compact design. Bevels provided on both sides enable the diode to be pressed into the rectifier from two sides.

Press-fit power diode

An electrical component, e.g., a press-in diode, is provided, which is suited for high currents and which ensures reverse-polarity protection. The electrical component includes at least one chip which is connected via soldering layers to a lead wire and a base. In the event of a rising temperature caused by polarity reversal, the clamp-type connection between the individual parts of the electrical component, e.g., the lead wire and the base, is released since the connecting plastic sheath softens, resulting in the release of the clamp-type connection, thereby interrupting the electrical connection and thus a current flow. At normal operating temperature, the clamp-type connection between the individual parts of the diode is ensured via a plastic sheath and a plastic sleeve, with bulges of the lead wire and the base protruding into the plastic sheath, thereby making the connection particularly stable.

Electrical component

In a semiconductor systemmade up of multiple sublayers, a sublayer over the largest part of a cross-sectional area BC in the interior of the semiconductor system borders immediately on the first sublayer, while bordering on a second sublayer only in a comparatively narrow edge region of the cross-sectional area. The semiconductor system is characterized by a low bulk resistance and a high breakdown voltage in the edge region. In addition, a method for manufacturing this semiconductor system is specified.

Semiconductor diode and method for the production thereof

A polarity-reversal protector for power sources, in particular for automobile batteries, which is connected between a power source and at least one consumer and/or at least one generator, is described. The polarity-reversal protector is to prevent the reverse polarity current from flowing through the connected systems, so that the systems may not be damaged in case of polarity reversal. For this purpose, the polarity-reversal protector includes means for recognizing whether the two poles of the power source are connected to the appropriate terminals of the consumer and/or generator, and means for decoupling the power source from the consumer and/or from the generator if the two poles of the power source have been transposed during connection to the consumer and/or generator.

Polarity-reversal protection circuit for energy sources

A rectifier system, in particular a rectifier bridge for a three-phase generator, includes a plurality of rectifier elements, specifiable rectifier elements being different from the other rectifier elements in at least one property. The rectifier elements are, for example, diodes which differ from one another with regard to the following properties: switching time or the reverse recovery switching time and/or current density and/or chip area and/or chip thickness and/or the breakdown voltage and/or internal resistance and/or path resistance and/or with regard to another property which is suited for reducing ripple.

Rectifier system having different rectifier elements

A method for eliminating eruptions, impurities, and/or damage in a crystal lattice by selectively etching silicon elements of surface-plated and sawn-out parts of a silicon wafer. At least areas of the silicon elements are brought into contact with a gaseous etching medium that etches silicon selectively in a chemical reaction, and gaseous reaction products are produced during etching. An interhalogen or fluorine-noble gas compound that is in a gaseous state or was converted to the gaseous phase may be used as the etching medium. The method is believed to be suitable for producing power diodes sawn from a wafer or for overetching fully mounted individual diodes.

Method for removing defects from silicon bodies by a selective etching process

A diode system and a generator, uses Zener diodes. The diode system has AC voltage terminals and DC voltage terminals, in which the Zener diodes are operable in the forward direction to rectify an AC voltage present at the AC voltage terminals, in which a lower limit is provided for the Zener voltage of the Zener diodes, and in which the lower limit of the Zener voltage is provided so that it is lower than a preset lower DC voltage.

Diode system having zener diodes and a generator

A semiconductor system having a pn transition and a method for manufacturing a semiconductor system are disclosed. The semiconductor system is designed in the form of a chip having an edge region, the semiconductor system includes a first layer of a first conductivity type and a second layer of a second conductivity type, which is of opposite polarity to the first conductivity type. The first layer has an edge region and a center region, the pn transition being provided between the first layer and the second layer. The second layer is more weakly doped in its edge region than in its center region, and the boundary surface of the pn transition at the edge region is non-parallel to the main chip plane.

Semiconductor system having a pn transition and method for manufacturing a semiconductor system

An arrangement having p-doped semiconductor layers and n-doped semiconductor layers which exhibits transitions between the p-doped semiconductor layers and n-doped semiconductor layers, the transitions displaying a Zener breakdown upon application of a voltage characteristic of a transition, a plurality of transitions between p-doped semiconductor layers and n-doped semiconductor layers being present, and the characteristic voltages additively make up the breakdown voltage of the entire arrangement. Also described is a method for manufacturing the arrangement.

Arrangement with p-doped and n-doped semiconductor layers and method for producing the same

A rectifier assembly including a fusible cutout is configured as a polarity reversal protection device. The fusible cutout includes a semiconductor chip having a positive temperature coefficient so that when it overheats, it becomes unsoldered and interrupts the current flow.

Rectifier system

A method is proposed for producing semiconductor components, in which at least one doped region is introduced in a wafer, a solid glass layer provided with dopant being applied on at least one of the two sides of a semiconductor wafer, in another step, the wafer being heated to high temperatures so that the dopant from the glass layer penetrates deep into the wafer to produce the at least one doped region; and in a further step, the glass layer being removed. The method is used for producing homogeneous, heavily doped regions, it also being possible to introduce these regions in the wafer on both sides and for the regions to be of different doping type.

Method for producing highly doped semiconductor components

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Reutlingen, Germany

Richard Spitz