Rca Inc.

Richard Seely Crandall

Brian Wilfred Faughnan

Alfred C Ipri

Grzegorz Kaganowicz

Allen Bloom

A method for forming a dielectric film over a semiconductor device is disclosed. The body of semiconductor material is formed and a hydrogen-containing silicon nitride material substantially free of silicon-hydrogen bonds is formed thereover. Also disclosed is a semiconductor device, including a body of semiconductor material and a dielectric film thereover. The dielectric film is a hydrogen-containing silicon nitride material substantially free of silicon-to-hydrogen bonds.

Method of forming a dielectric film and semiconductor device including

A reversible optical recording medium is comprised of an electrically conductive layer overlain by a thermoplastic layer containing a light absorptive compound selected from the group consisting of metal complexes of substituted ethylene dithiols having the structure ##STR1## where M is Pt, Pd, or Ni and R and R' are independently alkyl, phenyl or substituted phenyl groups. Information is recorded by sequentially charging the recording medium and then heating it above its softening temperature by absorption of the recording light beam in the thermoplastic layer.

Reversible optical storage medium and a method for recording information

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.

Method for measuring the drift mobility in doped semiconductors

Optical information is stored in a member which includes a layer of electrochromic material and an electrolyte in contact with the electrochromic material. The electrolyte has particles of photoconductive material therein. The member is exposed to optical information such that electron-hole pairs are formed in the photoconductive material. The creation of the electron-hole pairs produces persistent coloration in the electrochromic material in an area which corresponds to the optical information. If desired, the stored information can be erased by applying an electric field to the member.

Method of storing optical information

An electrochromic device includes a layer of electrochromic material, such as tungsten oxide. The electrochromic material includes a dopant, such as molybdenum oxide. A sufficient amount of the dopant, for example, 2% by atomic weight, functions to shift the natural color center absorption peak of the electrochromic layer. Due to the shift of the color center absorption peak, coloration of the layer of electrochromic material exhibits an improved match to the spectral sensitivity of the human eye. Consequently, less electrical energy is required to operate the device at satisfactory viewing levels as compared to conventional devices where the color center absorption peak is less closely matched to the spectral sensitivity of the human eye.

Electrochromic device having a dopant therein to improve its color

A layer of electrochromic material is on a substrate. An acid electrolyte is on the layer of electrochromic material. An indium electrode is utilized to produce coloration in the layer of electrochromic material without the need for any external electrical power. If a conductor layer is disposed between the substrate and the layer of electrochromic material, the device operates under a biasing voltage with substantially no polarization.

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Princeton, NJ, United States of America

Richard Seely Crandall