Bell Telephone Laboratories

At&t Bell Laboratories

Richard S Wagner

Hyman J Levinstein

Ashok K Sinha

Ronald J Schutz

Robert B Marcus

Ruichen Liu

Shyam P Murarka

Kin Ping Cheung

Cyril J Mogab

Cesar D Capio

Frank B Alexander, Jr

Christopher J Case

Victor Emerald Hauser, Jr

Direct contact to shallow junctions in integrated circuits and interconnection between these contacts is achievable by utilizing a specific aluminum CVD process. In this process the aluminum is deposited utilizing a triisobutyl aluminum precursor onto a substrate having a nucleation layer, e.g. a titanium nitride layer. By appropriate choice of this nucleation layer to control the nucleation of the depositing aluminum, suitable contact is made while avoiding void defects present in the absence of such layer.

Process for fabricating integrated circuits having shallow junctions

Magnetic bubble devices having planar geometry are produced by a particular sequence of processing steps. This sequence of processing steps includes the sequential deposition on a garnet material of an insulating material, an electrically conductive material, a second insulating material, and a material such as permalloy. The upmost layer is then patterned by conventional techniques. The pattern thus produced is used as a mask and the exposed underlying insulating layer is removed. The exposed metal conducting layer is then patterned and etched in a pattern different from that of the permalloy and second insulating layers by a process such as selective plasma etching that does not substantially degrade the exposed dielectric material or the permalloy. The results are a device with layers having planar geometry.

Fabrication technique for the production of devices which depend on

Many of the stacking faults which occur after oxidation of silicon wafers are substantially eliminated by the use of an argon-hydrochloric anneal of the wafers just prior to oxidation. This anneal, which is carried out in the same chamber in which oxidation is carried out, removes impurities from the surface of the wafers and thereby limits the sites at which stacking faults form after oxidation.

Method of limiting stacking faults in oxidized silicon wafers

An improved radio frequency (rf) powered radial flow cylindrical reactor utilizes a gas shield which substantially limits the glow plasma discharge reaction to a section of the reactor over the semiconductor substrates which are to be coated. The gas shield permits the use of higher rf input power which contributes to the formation of protective films that have desirable physical and electrical characteristics.

Radial flow reactor including glow discharge limiting shield

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Bernardsville, NJ, United States of America

Richard S Wagner