Johns Hopkins University

Richard S Potember

Theodore O Poehler

Dwaine O Cowan

Richard C Benson

Carla A Viands

Shoji Yamaguchi

Wayne A Bryden

George L Coles

Philippe Martin Burlina

Wayne I Sternberger

Julia B Patrone

Jennifer L Breidenich

Henry S Hu

John H Benson

Benjamin Elder

Sybil Klaus

Kenneth R Speck

Eric Jackson

A ventriculoperitoneal shunt includes a proximal catheter, a distal catheter, a shunt valve operably coupling the proximal catheter to the distal catheter, and a contrast container containing contrast material configured to change acoustic impedance proportionally to a change in pressure applied to the contrast container.

Ventriculoperitoneal shunt with pressure responsive element

A biocompatible article including (a) a biocompatible hydrogel; (b) an adhesive coating on at least a portion of the hydrogel; and (c) one or more organisms adhered to at least a portion of the adhesive coating is disclosed.

Biocompatible article for the treatment of water and production of energy

A method and apparatus is described for neutralizing airborne pathogens in ventilated air, and in heating or air conditioning systems. The pathogen neutralization system is effective against a wide spectrum of pathogens, it incorporates commercially available components, and it can be readily integrated into commercial HVAC systems where it neutralizes airborne pathogens in large volumes of ventilated air in real time without any chemical reagents. Typically, the system has a flow-through reaction chamber that contains a UV light source that emits short intense flashes of broad-spectrum UV light, a source of water vapor or spray, and an ozone generator. The system generates highly reactive ozone intermediates by irradiating ozone gas with UV light in the presence of water droplets or water vapor. The pathogens that can be neutralized by this system include bacteria, viruses, spores, fungi and parasites.

Method and apparatus for air treatment

The invention is a method and device providing very high density information storage on an organomellic DCNQI charge transfer data storage medium. The medium is switched from one state to another through the application of an electric field to the medium by the probe tip of a scanning tunneling microscope resulting in an observable change in the electron density of the surface of the medium.

Electron density storage device using a STM

The invention is a method and device providing very high density information storage on an organometallic charge transfer data storage medium. The medium is switched from one state to another through the application of an electric field to the medium by the probe tip of a scanning tunneling microscope resulting in an observable change in the electron density of the surface of the medium. A STM tip is used to write, read and erase data via the organometallic charge transfer medium (e.g. TCNQ, or derivatives thereof).

Electron density storage device and method using STM

Vanadium dioxide thin films have been prepared from tetrravalent vanadium organic compounds via the sol gel process. The vanadium dioxide was deposited from an alcoholic solution. Films were annealed between 200.degree.-700.degree. C. under nitrogen to achieve complete dehydration and crystallization.

Vanadium dioxide formed by the sol-gel process

The charge transfer apparatus of the present invention comprises an optical storage medium of either a mixture of several charge transfer compounds of varying redox potential or a single amphoteric organic charge transfer compound capable of undergoing a multistage charge transfer reaction, and a source of optical energy, typically a laser. When the optical energy illuminates a spot on the optical storage medium, the spot switches to one of a plurality of optically detectable states.

Multistate optical switching and memory apparatus using an amphoteric

Optical devices using an organic charge transfer salt as the switching and storage media are disclosed. Generally, a light beam of a given intensity directed to a film of certain organic charge transfer salts causes the illuminated area to change from a first to a second state. This electrochemical process is reversible with heat energy transforming the illuminated area back into the first state. The first and second states have identifiably different optical and electrical properties. The organic charge transfer salt is used to fabricate an erasable or permanent optical memory and a threshold on bistable optoelectronic switch.

Optical storage and switching devices using organic charge transfer salts

An enhanced optically sensitive medium is disclosed which uses an organic charge transfer complex as the switching material. The organic charge transfer complex includes at least one moiety in an oxidized state. An enhancement mechanism is taught which provides a secondary source of neutral molecules of said at least one constituent moiety in the neutral or altered oxidation state. For example, with CuTCNQ used as the switching material, the erasing characteristics can be improved by using a covering dispersion having a matrix polymer interspersed with neutral molecules of TCNQ.degree..

Enhanced optically sensitive medium using organic charge transfer

A multistate organic optical storage medium is disclosed, wherein an optical beam can switch any 'data storage spot' on said optical storage medium into three or more memory states. The optical storage medium may consist of a mixture of bistate switching modules, or it may consist of large delocalized amphoteric molecules. The illuminated area of said optical storage medium will undergo an electrochemical topactic redox reaction which will cause certain moieties in the illuminated area to change oxidation state. By changing the intensity of the optical 'write' beam the illuminated area can be switched to a plurality of specific states each state having a unique set of oxidation species. An optical/spectroscopic means is used to identify the presence of oxidation species and to 'read' the data stored.

Multistate optical switching and memory using an amphoteric organic

A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between netallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provide switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.

Electrical organic thin film switching device switching between

A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between metallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provides switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule. Various other modifications, adaptations and alterations are of course possible in light of the above teachings. Therefore, it should be understood at this time that within the scope of the appended claims the invention may be practiced otherwise than as specifically described.

Method of fabricating a current controlled bistable electrical organic

A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between metallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provides switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.

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Baltimore, MD, United States of America

Richard S Potember