Lsi Logic Corporation

Richard S Osugi

Ronald J Nagahara

Dawn M Lee

Nicholas F Pasch

Shumay X Dou

Colin D Yates

Marilyn Hwan

A process for modifying an alignment mark is described. The process includes: (i) fabricating the alignment mark on an integrated circuit substrate surface, which alignment mark includes an alignment mark fill material of defined composition; and (ii) introducing a step in the alignment mark by polishing the integrated circuit substrate surface and removing at least some of the alignment mark fill material from the integrated circuit substrate to form a modified alignment mark. The modified alignment mark is capable of allowing an alignment tool to detect the modified alignment mark when the modified alignment mark is covered by an opaque layer and thereby align a first layer of the integrated circuit substrate to the opaque layer that is disposed above the first layer.

Generating non-planar topology on the surface of planar and near-planar

A process for compensating for degradation of a first polishing pad during polishing on the first polishing pad of a plurality of substrate surfaces that have substantially similar film stacks is described. The process includes: (a) characterizing a test polishing pad, which characterization includes determining changes in film removal rates of layers of the film stack during polishing of the plurality of the substrate surfaces on the test polishing pad; (b) polishing a first substrate surface on the first polishing pad, which is substantially similar to the test polishing pad, under a first set of polishing conditions; and (c) polishing a second substrate surface on the first polishing pad under a second set of polishing conditions. A difference between the second set of polishing conditions and the first set of polishing conditions is designed to minimize the changes in the film removal rates of the layers of the film stack and thereby compensate for degradation of the first polishing pad.

In-situ chemical-mechanical polishing slurry formulation for

A method of providing etched alignment marks on a semiconductor workpiece that has a substantially planar surface, such as one that has been polished, for supporting accurate alignment of the workpiece in subsequent process operations. The surface of the semiconductor workpiece includes two layers of materials that abut at the workpiece surface. For example, the workpiece may include a layer of insulative material such as silicon dioxide forming several vias and a layer of conductive material such as tungsten forming plugs in the vias. The method includes etching the substantially planar surface to reduce a height of one of the materials below the height of the other material. For example, the tungstein plugs can be etched to a height that is below the height of the surrounding silicon dioxide. The location where the silicon dioxide abuts the tungsten produces a small bump. This bump then serves as an alignment mark for subsequent operations. Furthermore, such subsequent operations will replicate, and/or enhance, the topographical distinction of the alignment mark.

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Milpitas, CA, United States of America

Richard S Osugi