Axcelis Technologies, Inc.

Richard Rzeszut

Neil K Colvin

William Davis Lee

Tseh-Jen Hsieh

Ashwin Madhukar Purohit

Marvin Raymond LaFontaine

Dennis Elliott Kamenitsa

Wendy Colby

Fernando M Silva

Jason R Beringer

James P Quill

Xiangyang Wu

A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.

Hydrogen generator for an ion implanter

An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

Implantation using solid aluminum iodide (ALI3) for producing atomic aluminum ions and in situ cleaning of aluminum iodide and associated by-products

Implantation using solid aluminum iodide (AlI3) for producing atomic aluminum ions and in situ cleaning of aluminum iodide and associated by-products

One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.

De-clamping wafers from an electrostatic chuck

The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote&#xae; and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particulates generated from thermal expansion. The method comprises forming a clamping member for a substrate comprising a ceramic material and a ceramic surface, and coating the ceramic surface with a compliant layer comprising an organic silicide or TT-Kote&#xae;.

Electrostatic chuck with compliant coat

A gas delivery system for an ion implantation system comprises a gas source at a first voltage potential and an ion source at a second voltage potential which is larger than the first voltage potential. The system further comprises an electrically insulative connector coupled between the gas source and the ion source. The present invention also comprises a method of delivering gas to an ion implantation system which comprises maintaining a voltage potential of a source gas at a storage location at a first voltage potential that is less than a second voltage potential at an ion source of the ion implantation system and delivering the source gas from the storage location to the ion source.

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Billerica, MA, United States of America

Richard Rzeszut