International Business Machines Corporation

Richard Philip Surprenant

Laertis Economikos

Charles J Hendricks

Thomas Anthony Wassick

Robert Hannon

David Clifford Long

Jon Alfred Casey

Mark J LaPlante

Krystyna Waleria Semkow

Brian Richard Sundlof

Robert Anthony Rita

Richard Francis Indyk

Donald Rene Wall

Glenn A Pomerantz

James G Balz

Arthur Gilman Merryman

Michael Berger

Kathleen M Wiley

Michael S Cranmer

Jerome D Cohen

Lori A Maiorino

Patrick E Spencer

Peter A Franklin

James Patrick Wood

Edward Sumner Begle

Stephen J Tirch, Iii

Nancy Wagner Hannon

Thomas J VanDuynhoven

Mathias Pierre Jeanneret

A method and system for quantifying manufacturing complexity of electrical designs randomly places simulated defects on image data representing electrical wiring design. The number of distinct features in the image data without the simulated defects and the number of distinct features in the image data with the simulated defects are determined and the differences between the two obtained. The difference number is used as an indication of shorting potential or probability that shorts in the wiring may occur in the electrical wiring design. The simulating of the defects in the image data may be repeated and the difference value from each simulation or run may be used to obtain a statistical average or representative shorting potential or probability for the design.

Method for quantifying the manufacturing complexity of electrical designs

Method for quantifying the manufactoring complexity of electrical designs

A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and the repair net each terminate at surface vias of the substrate. A laser is used to form post fired circuitry on and in the substrate. This is followed by the electrical isolation of the defective net from the electrical repair structure and passivation of the electrical repair line.

Electronic package repair process

A multilayer thin film via landing pad structure includes a thin film conductor structure with a recessed landing pad formed between an upper layer of polyimide dielectric and a lower layer of polyimide dielectric. A multilayer thin film via landing pad structure is formed on a lower layer of dielectric having a top surface. A depression is formed in the top surface of the lower layer of dielectric. The depression has a bottom within the lower layer. A recessed landing pad comprising a conductor is formed in the depression on the surface of the lower layer of dielectric. A conductor line is formed on the lower layer of dielectric in contact with the recessed landing pad. An upper layer of dielectric is formed over the lower layer of dielectric, the thin film conductor line and the recessed landing pad. A conductive via is formed extending through the upper layer of dielectric into contact with the recessed landing pad. Both the recess and the via are formed by laser ablation with the identical mask and laser ablation tool.

Method of forming recessed thin film landing pad structure

A multilayer thin film structure (MLTF) is provided having no extraneous via-pad connection strap plated metallurgy for defective vias needing removal. The method for making or repairing the MLTF comprises determining interconnection defects in the MLTF at a thin film layer adjacent to the top metal layer of the structure, applying a top surface dielectric layer and forming vias in the layer, applying a metal conducting layer and removing the metal conducting layer for via-pad connection straps of defective vias and at the intersection of XY lines used in the repair, defining the top surface metallization including a series of orthogonal X conductor repair lines and Y conductor repair lines using a photoresist and lithography and then using a phototool to selectively expose the photoresist to define top surface strap connections needed to repair the interconnections and/or make EC's, and forming the top surface metallization using additive or subtractive metallization techniques.

Seed metal delete process for thin film repair solutions using direct UV laser

A laser tool for securing or removing a component from a semiconductor substrate includes a light-transmissive bonding tip having an opening to accommodate a central portion of the component inner and outer walls of the tip being coated with a light reflective material, a portion of the end of the tip being coated with a light absorptive material, so that peripheral areas of the component are locally heated by the tip to mount or remove the component.

Mounting and/or removing of components using optical fiber tools

Temperature gradients between a ceramic substrate of high thermal conductivity and the braze materials used to attach a metallic device such as a cap are reduced by using an embedded internal heat source in the substrate to minimize the thermal gradient, thereby minimizing the stresses that can result in substrate cracking when a cap is brazed onto the substrate.

High thermal conductivity substrate and the method of brazing a cap

A laser ablation apparatus and method removes undesired portions of a workpiece. An industrial laser generates a beam of optical energy and directs the beam at the workpiece. A mechanism in the path of the beam for shapes the cross-section of the beam and includes first and second linear actuators on opposite sides of the beam path. Each of the actuators includes a plurality of linear members, with each linear member being adjacent to and in contact with another linear member, and means for individually inserting and retracting each of said members into and out of said beam path a desired distance to thereby shape the beam so as to ablate only undesired portions of the workpiece.

Laser ablation apparatus and method

The present invention relates generally to a new structure and a method for repairing electrical lines, and more particularly, the invention encompasses a structure and a method for repairing electrical lines on a ceramic or a semiconductor substrate. On a substrate that has an open or an electrical discontinuity, one or more trenches or grooves are made next to the open, or discontinuity and using standard deposition process one or more metals are deposited in the open to provide or restore electrical continuity while the excess deposition material is allowed to drain or propagate into the trench.

Structure and a method for repairing electrical lines

Growing community of inventors

Poughkeepsie, NY, United States of America

Richard Philip Surprenant