Tokyo Electron Limited

Other

The United States of America As Represented by the United States

Richard Parsons

Wayne L Johnson

Eric J Strang

Andrej Mitrovic

Murray D Sirkis

Bill H Quon

Deana R Delp

Jovan Jevtic

Richard Wood

Yuji Tsukamoto

Robert Jackson

Alan B Casamajor

Jody Goldfield

A vanity plate assembly includes a plate that has indicia printed thereon. A strip is positionable against the plate. A pair of brackets is provided and each of the brackets releasably engages the strip. A pair of fasteners is each extendable through the plate, the strip and the brackets for coupling the plate, the strip and the brackets together. A pair of couplers is provided and each of the couplers releasably engages a respective one of the brackets. Each of the couplers releasably engages a respective one of a pair of chain supports on a hitch receiver of a vehicle. In this way the plate is suspended beneath the hitch receiver without interfering with using the hitch receiver.

Vanity plate assembly

A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

Method and apparatus for wall film monitoring

A non-linear test load is provided for calibrating a plasma system. The test load is a substrate for modeling the electrical characteristics of the plasma such that multi frequency testing can be performed in the absence of a plasma reaction. An exemplary substrate includes a first semiconductor junction for providing a non-linear response to the multi-frequency RF source provided from the anode. The first semiconductor junction exhibits a first capacitance for modeling a first plasma sheath of the anode. A plasma component is responsive to the first semiconductor junction and exhibits a resistance for modeling a resistance of the plasma, an inductance for modeling an inductance of the plasma, and a gap capacitance for modeling capacitance of the plasma. A second semiconductor junction is responsive to the plasma component for providing a non-linear response to the multi-frequency RF source provided from the plasma component, the second semiconductor junction exhibits a second capacitance for modeling a second plasma sheath of the cathode.

Non-linear test load and method of calibrating a plasma system

The present invention provides a diagnostic system for plasma processing, wherein the diagnostic system comprises a multi-modal resonator, a power source, a detector, and a controller. The controller is coupled to the power source and the detector and it is configured to provide a man-machine interface for performing several monitoring and controlling functions associated with the diagnostic system including: a Gunn diode voltage monitor, a Gunn diode current monitor, a varactor diode voltage monitor, a detector voltage monitor, a varactor voltage control, a varactor voltage sweep control, a resonance lock-on control, a graphical user control, and an electron density monitor. The diagnostic system can further provide a remote controller coupled to the controller and configured to provide a remote man-machine interface. The remote man-machine interface. The remote man-machine interface can provide a graphical user interface in order to permit remote control of the diagnostic system by an operator. In addition, the present invention provides several methods of controlling the diagnostic system in order to perform both monitor and control functions.

Method and system for electron density measurement

A method and apparatus for generating and controlling a plasma () formed in a capacitively coupled plasma system () having a plasma electrode () and a bias electrode in the form of a workpiece support member (), wherein the plasma electrode is unitary and has multiple regions (R) defined by a plurality of RF power feed lines () and the RF power delivered thereto. The electrode regions may also be defined as electrode segments () separated by insulators (). A set of process parameters A={n, &#x3c4;, &#x3a6;, P, S; L} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations L, &#x3c4;is the on-time of the RF power for the iRF feed line, &#x3a6;is the phase of the iRF feed line relative to a select one of the other RF feed lines, Pis the RF power delivered to the electrode through the iRF feed line at location L, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece () being processed with a desired amount or degree of process uniformity.

Method and apparatus for improved plasma processing uniformity

A process monitoring system () for monitoring a plasma processing system. The process monitoring system () includes a plurality of processing subsystems (), and a control system () coupled to the processing subsystems (). The control system () is configured to receive monitor data from the processing subsystems () and send control data to the processing subsystems (). The process monitoring system () also includes an external interface () coupled to the control system (), where the external interface () includes a paging system. The process monitoring system further includes a man-machine interface (MMI) coupled to the control system (). The MMI is configured to display the monitor data, display the control data, and access the paging system.

Man-machine interface for monitoring and controlling a process

Integrated voltage and current (VI) probe () for integration inside a transmission line () having inner () and an outer () conductors. Current probes, often implemented as loop antennas, can be coupled to the outer conductor. The probes can either be built onto the same panel or on different panels.

Integrated VI probe

A system and method for maintaining a plasma in a plasma region by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The components at frequencies that are harmonics of the fundamental frequency are reduced by placing RF energy absorbing resistive loads in energy receiving communication with the plasma, the resistive loads having a frequency dependent attenuation characteristic such that the resistive loads attenuate electrical energy at frequencies higher than the fundamental frequency more strongly than energy at the fundamental frequency.

Method and device for removing harmonics in semiconductor plasma processing systems

A method for controlling the non-uniformities of plasma-processed semiconductor wafers by supplying the plasma with two electrical signals: a primary electrical signal that is used to excite the plasma, and a supplemental electrical signal. The supplemental signal may be composed of a plurality of electrical signals, each with a frequency harmonic to that of the primary signal. The phase of the supplemental signal is controlled with respect to the phase of the primary signal. By adjusting the parameters of the supplemental signal with respect to the primary signal, the user can control the parameters of the resultant plasma and, therefore, control the non-uniformities induced in the semiconductor wafer.

Addition of power at selected harmonics of plasma processor drive frequency

An RF power supply system () for use with an electrode () in a plasma reactor system () capable of supporting a plasma () with a plasma load impedance (Z), wherein the electrode comprises a plurality of electrode segments (). The system comprises a master oscillator (), and a plurality of RF power supply subsystems () each electronically connected thereto, and to respective ones of the electrode segments. Each RF power supply subsystem includes a phase shifter (), an amplifier/power supply (), a circulator (), a directional coupler (), and a match network (MN/L). The latter has a match network impedance. The system further includes a control system () electronically connected to each RF power supply subsystem. The control system dynamically changes the match network impedance for each subsystem to match the plasma load impedance, and also adjusts one or more of the phase shifters in response to an electrode segment receiving power from other electrode segments. A method of controlling the RF power supply system is disclosed, as is a method for processing a substrate () with a plasma processing system having the RF power supply system of the present invention.

Control of power delivered to a multiple segment inject electrode

A system and method for monitoring the conditions in a gas plasma processing system while varying or modulating the RF power supplied to the system, so that resulting signals of the electrical circuits of the system provide information regarding operational parameters of the system or the state of a process. Significant improvements in sensitivity and accuracy over conventional techniques are thereby achieved. In addition, the plasma processing system can be thoroughly tested and characterized before delivery, to allow more accurate monitoring of and greater control over a process, thereby improving quality control/assurance of substrates being produced by the system. The information obtained by the modulation technique can be displayed on a monitor screen, in order to allow an operator to accurately monitor the system/process and diagnose any problems with the system/process.

System and method for monitoring and controlling gas plasma processes

A system and method for detecting and preventing arcing in plasma processing systems. Arcing is detected and characterized by measuring and analyzing electrical signals from a circuit coupled to the plasma. After characterization, the electrical signals can then be correlated with arcing events occurring during a processing run. Information can be obtained regarding location, severity, and frequency of arcing events. The system and method better diagnose the causes of arcing and provide improved protection against undesirable arcing, which can cause damage to the system and the workpiece.

Device and method for detecting and preventing arcing in RF plasma systems

A system and method for processing substrates having an improved matching system. A matching controller (,) is utilized to control multiple matching networks (MNA, MNB, MNC), thus providing improved, more rapid and stable matching. The matching controller can also automatically set up initial matching conditions required during and immediately after plasma initiation, to thereby provide faster and more reliable initial matching, and reduced operator involvement. The system also provides improved instrumentation, for more accurate phase and amplitude detection, and an improved arrangement of power detectors (,A,,B,,C). The matching network (MNA, MNB, MNC) also incorporates a circuit for reliable control of tunable elements in a matching network, and a device for protecting tunable elements against damage are also provided.

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Phoenix, AZ, United States of America

Richard Parsons