The United States of America As Represented by the Administrator of the

Other

California Institute of Technology

United States of America As Represented by the Administrator of Nasa

Richard P Vasquez

Jean-Pierre Fleurial

Michael E Hoenk

Ratnakumar V Bugga

Shouleh Nikzad

Margaret A Ryan

Todd J Jones

Mario R Blanco

Daniel Choi

Shiao-Pin S Yen

Brian D Hunt

Margie L Homer

Abhijit V Shevade

Matthew R Dickie

Wely Floriano

Marc C Foote

William Goddard

H Frank Greer

Micaiah Moyer

Minhee Yun

Nosang Myung

Tahir Cagin

A trigger assembly is disclosed. The trigger assembly contains a trigger containing an outer surface, a sear engagement member pivotally coupled with the outer surface of the trigger, and a spring member positioned between the outer surface and the sear engagement member.

Trigger assembly

The present invention relates to a nanowire sensor and method for forming the same. More specifically, the nanowire sensor comprises at least one nanowire formed on a substrate, with a sensor receptor disposed on a surface of the nanowire, thereby forming a receptor-coated nanowire. The nanowire sensor can be arranged as a sensor sub-unit comprising a plurality of homogeneously receptor-coated nanowires. A plurality of sensor subunits can be formed to collectively comprise a nanowire sensor array. Each sensor subunit in the nanowire sensor array can be formed to sense a different stimulus, allowing a user to sense a plurality of stimuli. Additionally, each sensor subunit can be formed to sense the same stimuli through different aspects of the stimulus. The sensor array is fabricated through a variety of techniques, such as by creating nanopores on a substrate and electrodepositing nanowires within the nanopores.

Nanowire sensor, sensor array, and method for making the same

A process for removing indium oxide from indium bumps in a flip-chip structure to reduce contact resistance, by a multi-step plasma treatment. A first plasma treatment of the indium bumps with an argon, methane and hydrogen plasma reduces indium oxide, and a second plasma treatment with an argon and hydrogen plasma removes residual organics. The multi-step plasma process for removing indium oxide from the indium bumps is more effective in reducing the oxide, and yet does not require the use of halogens, does not change the bump morphology, does not attack the bond pad material or under-bump metallization layers, and creates no new mechanisms for open circuits.

Method to improve indium bump bonding via indium oxide removal using a multi-step plasma process

Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO.sub.3, CaVO.sub.3, and SrVO.sub.3 are grown on electron-type high temperature superconductors such as Nd.sub.1.85 Ce.sub.0.15 CuO.sub.4-x. Alternatively, transition metal bronzes of the form A.sub.x MO.sub.3 are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO.sub.3 are grown on either hole-type or electron-type high temperature superconductors.

Epitaxial heterojunctions of oxide semiconductors and metals on high

An indicator light is arranged for actuation upon vibration imparted to the light housing. A mercury switch cooperates with a first switch to effect actuation of the light, with the mercury switch arranged for effecting contact. Further, the housing is arranged to include a pin member displaced within the housing upon vibration being imparted to the housing and pin member.

Earthquake indicator light apparatus

Long wavelength infrared detection is achieved by a detector made with layers of quantum well material bounded on each side by barrier material to form paired quantum wells, each quantum well having a single energy level. The width and depth of the paired quantum wells, and the spacing therebetween, are selected to split the single energy level with an upper energy level near the top of the energy wells. The spacing is selected for splitting the single energy level into two energy levels with a difference between levels sufficiently small for detection of infrared radiation of a desired wavelength.

Long wavelength infrared detector

The surface of high temperature superconductors such as YBa.sub.2 Cu.sub.3 O.sub.7-x are passivated by reacting the native Y, Ba and Cu metal ions with an anion such as sulfate or oxalate to form a surface film that is impervious to water and has a solubility in water of no more than 10.sup.-3 M. The passivating treatment is preferably conducted by immersing the surface in dilute aqueous acid solution since more soluble species dissolve into the solution. The treatment does not degrade the superconducting properties of the bulk material.

Passivation of high temperature superconductors

Growing community of inventors

Altadena, CA, United States of America

Richard P Vasquez