Applied Materials, Inc.

Applied Material, Inc.

Richard Omar Collins

Zhiyuan Ye

Nyi O Myo

Zhepeng Cong

Schubert S Chu

Kartik Bhupendra Shah

Shu-Kwan Danny Lau

Masato Ishii

Paul Brillhart

Mehmet Tugrul Samir

Anzhong Chang

Brian Hayes Burrows

Alexander Berger

Kailash Kiran Patalay

Jean Rene Vatus

Richard Giljum

Errol Antonio C Sanchez

Martin A Hilkene

Kevin Joseph Bautista

Manish Hemkar

David K Carlson

Abhishek Dube

Christophe Marcadal

Martin Jeffrey Salinas

Lori D Washington

Ala Moradian

Kin Pong Lo

Craig Metzner

Edric Tong

Karthik Ramanathan

Douglas Earl Holmgren

Toshiyuki Nakagawa

Nitin Pathak

Enle Choo

Herman Diniz

Anhthu Ngo

Danny D Wang

Preetham Rao

Songjae Lee

Yong Zheng

Ernesto J Ulloa

Palamurali Gajendra

Bobby M Ronsse

Martin Truemper

Adele Mariadass

Anita Zhao

Henry Barandica

Shainish Nellikka

Douglas E Holmgren

Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

Overlap susceptor and preheat ring

A plasma processing system for cleaning a substrate is provided. The plasma processing system includes a process chamber that includes: a chamber body enclosing an interior volume; and a substrate support disposed in the interior volume. The plasma processing system includes a vacuum pump; a first exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump; and a second exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump. The first exhaust line and the second exhaust line are arranged to provide alternative paths for the exhaust between the interior volume and the vacuum pump, and the first exhaust line has an internal diameter that is at least 50% smaller than the internal diameter of the second exhaust line.

Plasma preclean system for cluster tool

A process chamber includes a chamber body having a ceiling disposed above a floor with a chassis and an injector ring disposed therebetween. Upper and lower clamp rings secure the upper and floors, respectively, in place. An upper heating module is coupled to the upper clamp ring above the ceiling. A lower heating module is coupled to the lower clamp ring below the floor.

Epitaxial deposition chamber

An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

Multi-layer EPI chamber body

A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

Multi-thermal CVD chambers with shared gas delivery and exhaust system

A substrate processing system is disclosed which includes a processing chamber comprising a susceptor having a first surface and a second surface opposite to the first surface, a groove formed in the first surface adjacent to a perimeter thereof, and a substrate support structure including a plurality of carrier lift pins, each of the plurality of carrier lift pins movably disposed in an opening formed from the second surface to the first surface, wherein the opening is recessed from the groove.

Substrate transfer mechanism to reduce back-side substrate contact

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Diode laser for wafer heating for EPI processes

Embodiments described herein generally relate to a susceptor support for supporting a susceptor in a deposition process. The susceptor support includes a shaft, a plate with a first major surface coupled to the shaft, and a support element extending from a second major surface of the plate. The plate may be made of a material that is optically transparent to the radiation energy from a plurality of energy sources disposed below the plate. The plate may have a thickness that is small enough to minimize radiation transmission loss and large enough to be thermally and mechanically stable to support the susceptor during processing. The thickness of the plate may range from about 2 mm to about 20 mm.

Susceptor support

A substrate processing system is disclosed which includes a substrate input/output chamber coupled to a transfer chamber, and one or more processing chambers coupled to the transfer chamber, wherein the substrate input/output chamber includes a plurality of stacked carrier holders, and a platen, wherein the platen includes a plurality of alignment pads and a plurality of openings formed in a recessed flange along a peripheral edge of the platen.

Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

Susceptor design to reduce edge thermal peak

Embodiments of heating lamps and heating lamp assemblies are disclosed herein. In some embodiments, a heating lamp may include a bulb; a reflector circumscribing the bulb proximate a first end of the bulb; a base coupled to the reflector on a side opposite the bulb; a handle coupled to the base on a side opposite the reflector, wherein the handle comprises a body having a first end coupled to the base and an opposing second end; a first conductor extending from the bulb and through the base and the handle in a direction opposite the bulb; and a second conductor extending from the bulb and through the base and the handle in a direction opposite the bulb.

Heating lamp assembly

Lower chamber liner

Upper chamber liner

Growing community of inventors

Santa Clara, CA, United States of America

Richard Omar Collins