South China Normal University

Univ South China Normal

Richard Notzel

Guofu Zhou

Peng Wang

Stefano Sanguinetti

Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (). Further provided are methods for preparing the nanowire array and the optoelectronic device.

Nanowire array, optoelectronic device and preparation method thereof

An epitaxial wafer, a method of manufacturing the epitaxial wafer, a diode, and a current rectifier are provided. The epitaxial wafer comprises a Si substrate layer; an insulating layer formed on the Si substrate layer; and a nitride semiconductor layer formed on a surface of the insulating layer facing away from the Si substrate layer; wherein the insulating layer has a thickness configured such that under a forward bias voltage, the insulating layer may allow electrons and holes to pass from one side to the other side of the insulating layer via quantum tunneling so as to allow a forward current flow.

Epitaxial wafer, method of manufacturing the epitaxial wafer, diode, and current rectifier

An InGaN-based LED epitaxial wafer and a fabrication method thereof are disclosed, wherein the InGaN-based LED epitaxial wafer includes: a substrate; an InGaN layer, formed on a surface of the substrate, having an In content between 40% and 90%, so as to ensure that the LED epitaxial wafer is capable of emitting long-wavelength light or near-infrared rays; a p-type metal oxide layer, formed on a surface of the InGaN layer facing away from the substrate, acting as a hole injection layer for the InGaN layer.

InGaN-based led epitaxial wafer and fabrication method thereof

Provided are a method for preparing an InGaN-based epitaxial layer on a Si substrate (), as well as a silicon-based InGaN epitaxial layer prepared by the method. The method may include the steps of: 1) directly growing a first InGaN-based layer () on a Si substrate (); and 2) growing a second InGaN-based layer on the first InGaN-based layer ().

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Guangdong, China

Richard Notzel