USA as Represented by Secretary of the Navy

Richard Magno

John Bradley Boos

Brian R Bennett

Berend T Jonker

Mario Ancona

James G Champlain

Paul M Campbell

Harvey S Newman

Nicholas A Papanicolou

Brad P Tinkham

This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a InAlAsSblayer, on the AlSb layer and wherein the InAlAsSbcomprises varying levels of Te doping, a InGaSb layer on the InAlAsSblayer, wherein the InGaSb layer is Be doped, wherein the first section of the InAlAsSblayer has is Te doped, wherein the second section of the InAlAsSblayer has a grade in Te concentration, and wherein the third section of the InAlAsSblayer is Te doped.

P-N junction for use as an RF mixer from GHZ to THZ frequencies

This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collector layer of an antimony-based material deposited on the sub-collector layer, a base layer of an antimony-based material deposited on the collector layer, an emitter layer of an antimony-based material deposited on the base layer, and a cap layer of an antimony-based material deposited on the emitter layer.

InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors

This invention pertains to an electronic device containing a semi-insulating substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer of InAsSbmaterial disposed on said buffer layer, a barrier layer of an antimony-based disposed on said channel layer, and a cap layer of InAsSbmaterial disposed on said barrier layer, wherein the device can have frequency of on the order of 500 GHz and a reduced power dissipation.

High electron mobility transistors with Sb-based channels

A circuit includes at least one negative differential resistance (NDR) device and at least one magnetic device having reversibly variable resistance, wherein the negative differential resistance device and the magnetic device are operatively connected so that changing the resistance of the magnetic device changes the current-voltage response characteristics of the circuit. NDR devices and magnetic devices can be arranged to form multiple value logic (MVL) cells and monostable-bistable transition logic elements (MOBILE), and these logic cells can form the components of a field programmable gate array.

Growing community of inventors

Waldorf, MD, United States of America

Richard Magno