Foveon, Inc.

Richard M Turner

Richard Francis Lyon

Richard B Merrill

Milton B Dong

Carver A Mead

Robert S Hannebauer

Paul M Hubel

Russel A Martin

Michael Chen

Peter J Manca

Rudolph J Guttosch

Systems and methods of providing spatially dependent image exposure information to a user of a digital camera. The described approach is applicable to determination of image exposure quality in a digital camera system. In these applications an image is displayed in a first display mode wherein the exposure information is overlaid on the image or in a second display mode wherein the exposure information is eliminated or reduced and thus is less obstructive of the image. In the second display mode, a separate exposure warning optionally conveys a subset of the information displayed in the first display mode. The invention includes a user input operable to temporarily specify a change in the display of the image between the first mode and the second mode while an image is displayed, thus providing the user with direct control of the presence and duration of spatially dependent image exposure information.

Camera exposure indication interface

A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, and an array of such sensor groups. In some embodiments, a carrier-collection element of at least one sensor of the group has substantially larger area, projected in a plane perpendicular to a normal axis defined by a top surface of a top sensor of the group, than does each minimum-sized carrier-collection element of the group. In some embodiments, the array includes at least two sensor groups that share at least one carrier-collection element. Optionally, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor of the group.

Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group

An image sensor includes a plurality of pixel sensors arranged in at least one row and a plurality of columns. Each pixel sensor includes a photosensor to generate a photosensor output signal nominally indicative of an intensity of light incident on the photosensor. Each pixel sensor is configured to provide a signal corresponding to the photosensor output signal at an output of the pixel sensor. For each column, a column line couples together the outputs of the pixel sensors belonging to that column and terminates in a column node for that column. Column output circuitry associated with each column provides to image sensor sampling circuitry a signal corresponding to the column node for that column, based on an asserted state of a column enable signal for that column. Power consuming circuitry is associated with each column and is controllable between at least a normal power mode and a minimal power mode such that, when the power consuming circuitry associated with a particular column is in the minimal power mode, signals representing photosensor output signals generated by photosensors of that column's pixel sensors are prevented from being reliably sampled by the image sensor sampling circuitry. Controller circuitry coordinates the control of the power mode of the power consuming circuitry associated with each column with the state of the column enable signal for that column.

Managing power consumption by sampling circuit current sources

A storage pixel sensor disposed on a semiconductor substrate comprises a photodiode having a first terminal coupled to a first potential and a second terminal. A barrier transistor has a first terminal coupled to the second terminal of the photodiode, a second terminal and a control gate coupled to a barrier set voltage. A reset transistor has a first terminal coupled to the second terminal of the barrier transistor, a second terminal coupled to a reset reference potential that reverse biases the photodiode, and a control gate coupled to a source of a RESET signal. A photocharge integration node is coupled to said second terminal of said barrier transistor. The photocharge integration node comprises the control gate of a first source-follower transistor. The first source-follower transistor is coupled to a source of bias current and has an output. A capacitive storage node is coupled to the output of the first source-follower transistor and comprises the control gate of a second source-follower transistor having an output. An exposure transistor is coupled between the output of the first source-follower transistor and a global current-summing node and has a control gate coupled to a saturation level voltage.

High-sensitivity storage pixel sensor having auto-exposure detection

A vertical color detector group according to the present invention is formed on a semiconductor substrate and includes layers for collecting photons of different wavelength bands. The color detector group can be programmed to perform dynamic switching between sub-sampled color data and full measured color readout. The color detector group can also be configured in a portion of an array to emulate color filter array patterns, and programmed to dynamically alter the degree to which color information is sub-sampled. The programmable color detector groups can allow for switching between different levels of quality and resolution, allowing for selection of an optimal pattern based on image content or lighting conditions. By combining the color detector group of the present invention with conventional color filters, color filter arrays of more than three colors can be constructed.

Vertical color filter detector group and array

A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors. In preferred embodiments, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor. Preferably, the filter is or includes a layer that has been integrated with the sensors by a semiconductor integrated circuit fabrication process. In other embodiments, the sensor group includes a micro-lens. Other aspects of the invention are arrays of vertical color filter sensor groups, some or all of which include at least one filter or micro-lens, and methods for fabricating vertical color filter sensor groups and arrays thereof.

Vertical color filter sensor group with non-sensor filter and method for fabricating such a sensor group

An image sensor includes a plurality of active pixel sensors arranged in an array. Each active pixel sensor includes a photosensor that generates a sensor signal nominally indicative of an intensity of light incident on the photosensor and a follower-type amplifier that couples the sensor signal to an output of the active pixel sensor to provide a buffered sensor signal. A column line is provided for each column in the array, and each column line is coupled to the output of the active pixel sensors associated with that column. Row select signal generating circuitry is configured to substantially simultaneously select a set of plural particular rows of the array such that each of the active pixel sensors in the selected set of plural particular rows substantially simultaneously provides the buffered sensor signal for that pixel sensor to the column line for the column to which that pixel sensor belongs such that an output node of the column line indicates a collective output signal for the active pixel sensors in the selected set of plural particular rows, belonging to that column. Column select signal generating circuitry configured to substantially simultaneously select a set of plural particular columns of the array such that the output nodes for the selected plural particular columns are substantially simultaneously coupled to an output node of the image sensor.

Aggregation of active pixel sensor signals

An integrated active pixel sensor array arranged in a plurality of rows and columns comprises a saturation level line coupled to a source of saturation level control voltage, a global current-summing node. A plurality of active pixel sensors is disposed in the array, each pixel sensor associated with one row and one column of the array and including a photodiode having a first terminal coupled to a first potential and a second terminal, a reset transistor having a first terminal coupled to the second terminal of the photodiode, a second terminal coupled to a reset reference potential that reverse biases the photodiode, and a control gate coupled to the reset line, a photocharge integration node coupled to the second terminal of the photodiode, the photocharge integration node comprising the gate of a first source-follower transistor, the first source-follower transistor having a drain, coupled to a first source-follower drain line, and a source, a circuit for generating a bias current at the source of the first source follower transistor, and an exposure transistor having a source coupled to the source of the first source-follower transistor, a drain coupled to the global current-summing node and a control gate coupled to the saturation level line.

High-sensitivity storage pixel sensor array having auto-exposure detection

A storage pixel sensor disposed on a semiconductor substrate comprises a capacitive storage element having a first terminal connected to a fixed potential and a second terminal. A photodiode has an anode connected to a first potential and a cathode. A semiconductor reset switch has a first terminal connected to the cathode and a second terminal connected to a reset potential. A semiconductor transfer switch has a first terminal connected to the cathode and a second terminal connected to the second terminal of the capacitive storage element. A semiconductor amplifier has an input connected to the capacitive storage element and an output. The semiconductor reset switch and the semiconductor transfer switch each have a control element connected to a control circuit for selectively activating the semiconductor reset switch and the semiconductor transfer switch. A light shield is disposed over portions of the semiconductor substrate comprising a circuit node including the second terminal of the semiconductor transfer switch, the second terminal of the capacitive storage element and the input of the semiconductor amplifier and to prevent substantially all photons from entering the circuit node. Structures are present for preventing substantially all minority carriers generated in the semiconductor substrate from entering the circuit node. A plurality of storage pixel sensors are disposed in an array.

Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications

A digital pixel sensor is formed on a semiconductor substrate and comprises a phototransducer responsive to light for providing an analog output signal that is a function of an incident amount of light. A comparator is configured to compare the analog output signal and a ramp reference signal. A plurality of n DRAM cells are configured to store an at least n-bit digital signal in response to the output of the comparator. An array of digital pixel sensors is also disclosed.

Circuitry for converting analog signals from pixel sensor to a digital and for storing the digital signal

A scanning circuit for use with an active pixel sensor array comprises a row-address generator configured to start at a selected row-start address, stop at a selected row-stop address, and increment row addresses by a factor K. A column-address generator is configured to start at a selected column-start address, stop at a selected column stop address, and increment column addresses by a factor K. Circuitry is coupled to the row address generator and the column address generator, for storing the row-start address, the row-stop address, the column-start address, the column-stop address and the factor K. A row decoder is coupled to the row-address generator and a column selector is coupled to the column-address generator. A plurality of row select lines are coupled to the row decoder, each one of the row select lines associated with a different row in the active pixel sensor array. A plurality of column output lines are coupled to the column selector, each one of the column output lines associated with a different column in the active pixel sensor array.

Image scanning circuitry with row and column addressing for use in electronic cameras

An integrated active pixel sensor array comprises a plurality of row select lines, each of said row select lines coupled to a source of a row-select signal; a plurality of source-follower drain row lines, each of said source-follower drain row lines coupled to a source of a source-follower drain row signal; a plurality of column output lines; a reset line coupled to a source of a reset signal; a source of reset potential; and a plurality of active pixel sensors, each pixel sensor associated with one row and one column of the array and including a photodiode having a first terminal coupled to a first reference potential and a second terminal, a Reset transistor having a gate coupled to the reset line, a drain coupled to the reset potential to reverse bias the photodiode, and a source coupled to the second terminal of the photodiode, a Source-Follower transistor having a gate coupled to the second terminal of the photodiode, a drain connected to the one of the plurality of source-follower drain row lines with which its active pixel sensor is associated, and a source, a Row-select transistor having a gate coupled to the one of the plurality of row-select lines with which its active pixel sensor is associated, a drain coupled to the source of the Source-follower transistor, and a source coupled to the one of the plurality of column output lines with which its active pixel sensor is associated.

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Mountain View, CA, United States of America

Richard M Turner