Seh America, Inc.

Other

Richard M Aydelott

Travis S Nice

Clifford W Groat

Richard Robert Brown

Douglas G Anderson

Richard Donald Schuyler

Mark Edward Secrest

The method and apparatus of the present invention permit indirect identification of a target plane, such as the plane identified by an alignment feature, based upon the identification of a reference plane which is offset by a predetermined angle from the target plane. In addition, in order to permit alignment features to be defined at non-standard angles with respect to the axial orientation of an ingot, an apparatus is provided that includes a frame having at least two members. The first member abuts a bar extending outwardly from the stage of an x-ray diffractometer, while the second member carries an engagement member for engaging a non-standard alignment feature. The second member may be movable relative to the first member to permit the frame to be mounted upon ingots having different non-standard alignment features.

Method and apparatus for orienting a crystalline body during radiation diffractometry

An apparatus for determining a melt spill during Czochralski crystal growing processes, having a sensor or detector that allows the creation or cessation of a signal when the presence of melt spill is detected. This invention includes a sensor or detector that can operate in high temperature conditions without causing contamination to the crystal growth process. Any detected melt spill triggers an alarm so that potentially dangerous and costly situations may be avoided. The melt spill detector may be placed in any location advantageous to detect the melt spill, and may be incorporated into the components of the crystal growing apparatus.

Melt spill indicator device

A time-released dopant delivery system and method are provided in a Czochralski-type crystal-growing furnace to enable continuous doping of the melt over time. The dopant delivery system and method adjusts dopant levels within the melt as a function of time such that a controlled amount of dopant and, more typically, a substantially constant amount of dopant can be incorporated into the ingot over its length. By controlling the doping level in the ingot, the resistivity profile of the ingot can also be controlled over its length. In order to provide controlled dopant delivery, the dopant delivery system generally includes a vessel defining an internal cavity within which the dopant is disposed and an orifice through which the dopant, typically a molten dopant, is released. The dopant delivery system can also include means for submerging the vessel within the melt such that heat from the melt melts and therefore releases the dopant into the melt. Alternatively, the vessel can be at least partially defined by the crucible so as to be disposed within the melt. By properly configuring the orifice defined by the vessel, however, the release of dopant into the melt can be regulated.

Method of controllably delivering dopant by limiting the release rate of dopant from a submerged vessel

A method of assembling portions of a pulling chamber of a semiconductor crystal growing machine is provided. A tension-bearing member is initially lowered to extend within and through at least a part of a pulling chamber and through a purge tube located below the pulling chamber. The tension-bearing member is attached to a purge tube-engaging device and the tension-bearing member is then raised to carry the purge tube upon the purge tube-engaging device. The purge tube can thereby be raised into a desired position within the pulling chamber. While the purge tube is raised, a purge tube holding ring can be installed within the pulling chamber and the purge tube can thereafter be lowered into an operative position during which the purge tube is supported by the purge tube holding ring.

Method for assembling portions of a pulling chamber

A method of handling internal components of a pulling chamber of a crystal-growing machine, and specialized tools for engaging such components. A connection mechanism includes a female receptacle that latches onto a tapered finger-like connection fixture extending upward from each of the tools. A specialized cart facilitates access to the pulling chamber and transports removed parts.

Purge tube ring removal tool

Holding ring tool

An exercise apparatus is presented that allows for adjustments in height, and optionally width between hand grips, while maintaining an ergonomic grip that is substantially parallel to the user's body, regardless of the adjustment used.

Push-up exercise apparatus

A seed chuck for supporting a seed crystal for dipping in a hot melt has a main body including a dipping support formation for connection to a dipping apparatus and a seed support formation for supporting a seed crystal. A shield is coupled to the main body that insulates the seed crystal from cooling and heats the seed crystal with radiant energy emitted from the hot melt. The shield can be in the form of an insulating layer disposed against or inside of a portion of the seed chuck. In this case, the seed crystal is insulated from the cooler seed chuck and allowed to be warmed by the hot melt. The shield can also be a removable flange extending outwardly from the seed chuck and having an inverted cup shape or parabolic umbrella shape. In this case, the shield prevents cooling external gas flow from reaching the seed crystal while capturing and directing heat radiating from the hot melt onto the seed crystal. A method of warming the seed crystal during a growth process in which the a portion of the seed crystal is dipped in a hot melt includes providing a hot melt consisting of a molten mass of material, supporting the seed crystal in a seed chuck for selectively lowering the seed crystal into the hot melt, and warming the seed crystal supported in the seed chuck by using heat radiating from the hot melt and by insulating the seed crystal from external cooling forces.

Insulating and warming shield for a seed crystal and seed chuck

Dopant delivery system and method

Purge tube removal and replacement

Insulating and warming shield for a seed crystal and seed chuck and

A method of growing a crystalline ingot, such as a dislocation free ('DF') crystalline ingot, is provided including the steps of providing a melt having an at least partially solidified surface. Next, a seed crystal is brought into contact with the solidified portion of the surface of the melt and the temperature of the seed crystal is permitted to stabilize. Once the temperature of the seed crystal has stabilized, the temperature of the melt is raised to completely liquify the melt. While the temperature of the melt is being raised, the seed crystal is maintained in contact with the melt thereby reducing thermal shock in the seed crystal by permitting the seed crystal to gradually warm with the liquidation of the melt. Once the melt is completely liquified, the seed crystal is withdrawn from the melt to thereby grow a DF crystalline ingot. Since the seed crystal remains relatively dislocation free due to the reduced temperature gradient between the seed crystal and the solidified portion of the surface of the melt, a DF crystalline ingot can be grown without a neck, or with a neck having a relatively large diameter and relatively short length, thereby enabling the growth of DF crystalline ingots having a larger diameter and a larger mass than grown with conventional CZ methods.

Method for reducing thermal shock in a seed crystal during growth of a

Improved chucks for supporting elongate objects having conical end portions, such as single crystal ingots of semiconductor material, while such objects are held and rotated, as in a lathe. A base portion of the chuck includes bores to accept fasteners to fasten the base to a headstock or tailstock of a lathe. The base includes a receptacle for holding an annular chuck insert which has a conical socket surface to engage the body, such as a conical end portion of a single crystal ingot, to be held and rotated. Alternatively, the base may have three or more rollers spaced equally about a central axis and rotatable about roller axes all located in a plane perpendicular to the central axis.

Multi-piece lathe chuck for silicon ingots

A Czochralski crystal growing system includes components for adding dopants to semiconductor materials and for growing single crystals. The components comprise a portion formed of a material that is chemically compatible with the semiconductor material. The portion includes a cavity sized to contain a desired amount of dopant. The cavity protects the dopant from exposure to contaminants, gas flows and heat in crystal growing furnaces. The portion is dipped into a melt to release the dopant. The portion can be a seed crystal which can further be used to grow a single crystal from the melt after doping. The components can include separate first and second portions formed of materials that are chemically compatible with the melt so that the portions can be placed into the melt. At least one of the first and second portions can contain a dopant. The second portion can be a seed crystal for growing a single crystal. The first portion can act as a heat sink to reduce temperature gradients between the melt and the seed crystal, so as to reduce the generation of dislocations in the seed crystal. The Czochralski crystal growing system also provides components for growing single crystals which may optionally not contain a dopant for adding to a melt. These components can comprise a seed crystal and a heat sink that controls heat transfer from the melt to the seed crystal to pre-heat the seed crystal in a controlled manner.

Growing community of inventors

Ridgefield, WA, United States of America

Richard M Aydelott