Cascade Microtech, Inc.

Triquint Semiconductor Corporation

Michigan Technological University

Richard Lynn Campbell

Eric W Strid

Thomas R Apel

Douglas B Brumm

Glen L Barna

Carl L Anderson

Michael Andrews

Kenneth R Smith

K Reed Gleason

Mike Andrews

Lynh Thuy Bui

Kooho Jung

High frequency interconnect structures, electronic assemblies that utilize high frequency interconnect structures, and methods of operating the same. The high frequency interconnect structures include a plurality of dielectric waveguides and are configured to communicatively connect a plurality of transmitters with a plurality of receivers and to convey a plurality of signals therebetween. The plurality of signals may include a plurality of electromagnetic waves and may have a frequency of at least 200 GHz. The high frequency interconnect structures further may be configured to decrease a potential for crosstalk between a first signal that is conveyed by a first dielectric waveguide of the plurality of dielectric waveguides and a second signal that is conveyed by a second dielectric waveguide of the plurality of dielectric waveguides, such as through control of a passband of the first dielectric waveguide relative to the second dielectric waveguide and/or the use of a crosstalk mitigation structure.

High frequency interconnect structures, electronic assemblies that utilize high frequency interconnect structures, and methods of operating the same

A wafer probe comprises a contact conductively interconnected with the wall of a waveguide channel and supported by a substrate that projects from an end of a waveguide channel.

Differential waveguide probe

A probe measurement system comprises a probe with a linear array of probe tips enabling a single probe to be used when probing a test structure with a differential signal.

Differential signal probing system

A test structure including a differential gain cell and a differential signal probe include compensation for the Miller effect reducing the frequency dependent variability of the input impedance of the test structure.

Test structure and probe for differential signals

A plurality of calibration structures facilitate calibration of a probing system that includes a differential signal probe having a linear array of probe tips.

Calibration structures for differential signal probing

A wideband differential signal probe includes separate paths to convert a lower frequency component and a higher frequency component of a differential signal to a lower frequency single ended signal and a higher frequency single ended signal which are combined for the probe's output which is commonly input to instrumentation.

Wideband active-passive differential signal probe

A probe with integral balun enables connecting a device utilizing differential signals to a source or a sink of single ended signals.

Differential signal probe with integral balun

A high frequency probe has contact tips located within the periphery of a terminal section of a coaxial cable and shielded by a ground conductor of the coaxial cable.

Probe for high frequency signals

A test structure for characterizing integrated circuits on a wafer includes a differential cell outputting a differential mode signal in response to a differential mode input signal. The probe pads of the test structure are arrayed linearly enabling placement of the test structure in a saw street between dies.

On-wafer test structures for differential signals

A transponder-based microwave telemetry apparatus for moving machinery includes a microwave transmitter disposed outside the moving machinery to fill a chamber of the moving machinery with microwave energy. The transponder-based microwave telemetry apparatus also includes a transponder disposed inside the moving machinery for measuring a sensed condition of a part of the moving machinery and providing a modulated microwave signal that contains information on the sensed condition. The transponder-based microwave telemetry apparatus further includes a receiver disposed outside the moving machinery to separate modulated and continuous-wave signal components of the signal and extracts information from the modulated component.

Transponder-based microwave telemetry apparatus

A three-level semiconductor balun is disclosed. In one embodiment, the balun includes a first spiral-shaped transmission line overlying a substrate. The first transmission line has first and second ends. A second spiral-shaped transmission line is substantially vertically aligned with the first transmission line. The second transmission line has a first end electrically connected to the second end of the first transmission line. A third spiral-shaped transmission line is substantially vertically aligned with the first and second transmission lines. The third transmission line has a first end electrically connected to a second end of the second transmission line. The balun may be integrated on the same chip with other RF circuit components, and is suitable for use at higher frequencies than most conventional baluns.

Three-level semiconductor balun and method for creating the same

A novel broadside-coupled transmission line element is disclosed. The element includes a first metallization layer that has a first spiral-shaped transmission line and at least one bridge segment formed therein. The element also includes a second metallization layer that has a second spiral-shaped transmission line and connector segments formed therein. The connector segments provide respective electrical conduction paths between the inner area of the first and second transmission lines and the outer area of the first and second transmission lines. A first one of the connector segments is electrically connected to the inner terminus of the second transmission line. The second transmission line has a gap at each intersection with the connector segments. A dielectric layer lies between the first and second metallization layers. The dielectric layer has a plurality of apertures formed therein for providing electrical connections between the second transmission line and the bridge segment(s) of the first metallization layer, and for providing an electrical connection between the inner terminus of the first transmission line and a second one of the connector segments. The element is realized in an integrated circuit environment, and may be used to create various circuit elements such as baluns, balanced and unbalanced transformers and current and voltage inverters for operation at high frequencies.

Integrated broadside coupled transmission line element

An apparatus for measuring the pressure within the torque converter of an automatic transmission. The apparatus includes a sensor to sense the interior pressure of the torque converter and generate an electrical signal representative of that pressure. That signal is converted to microwave energy which is radiated into the interior of the torque converter housing from a microwave transmitter located within the torque converter. Receiving microwave antennae exposed to the housing interior receive the microwaves and transmit an electrical signal corresponding to the microwave energy to a remote readout external of the torque converter. The receiving antenna are preferably in the form of resonant slots in the torque converter housing and the slots have a length related to the wavelength of the generated microwaves.

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Portland, OR, United States of America

Richard Lynn Campbell